High-Speed and Low-Temperature Atmospheric Photo-Annealing of Large-Area Solution-Processed IGZO Thin-Film Transistors by Using Programmable Pulsed Operation of Xenon Flash Lamp
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An efficient photo-annealing approach for high-performance solution-processed metal-oxide thin film transistors (TFTs) was demonstrated by using programmable pulse operation of xenon flash lamp. The flash lamp annealing (FLA) process could offer not only low-temperature (≈100° C) processing but also ultra-fast annealing speed of the order of seconds under air ambient conditions. Solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) TFTs implemented by the FLA process typically exhibited much improved electrical performance such as saturation mobility of >10.8 cm2V−11s−1, ION/IOPP of >108, and subthreshold slope of as steep as 0.24 V/dec. X-ray photoelectron spectroscopy analysis of a-IGZO films indicates that the FLA can provide sufficient activation energy for rapid formation of solid a-IGZO bonds within 30 s. The high-quality metal-oxide films achieved by an atmospheric and low temperature FLA method may represent a significant advance for scalable fabrication of flexible and printed metal-oxide electronics.
KeywordsMetal-oxide semiconductors Low temperature solution-process Thin-film transistor Flash lamp annealing Roll-to-roll process
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This research was supported, in part, by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (No. 2017-0-00048, Development of Core Technologies for Tactile Input/Output Panels in Skintronics (Skin Electronics)), as well as, in part, by the Chung-Ang University Graduate Research Scholarship in 2015.
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