Spatially-Resolved Remote Plasma Atomic Layer Deposition Process for Moisture Barrier Al2O3 Films
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In this study, nanoscale-thickness Al2O3 layers for moisture barrier films were developed by a spatially resolved remote plasma atomic layer deposition process. The effect of various process parameters was investigated on the atomic concentration of Al2O3 films including the substrate temperature, plasma power, and scanning speed of the substrates. Carbon components were identified as major impurities in the films and is reduced at high temperature, high plasma power and low speed. Optimum conditions are maximum temperature of 80 °C to prevent plastic substrate deformation, a maximum plasma power of 150 W without surface damage and maximum speed of 125 mm/sec to maintain a low carbon contents. The water vapor transmission rate (WVTR) of 3.2 × 10 −4 g/(m2·day) was achieved with 30 nm-thick film in optimum condition.
KeywordsLow temperature Al2O3 Spatially resolved atomic layer deposition Remote plasma atomic layer deposition Moisture barrier films
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