Investigation of X-ray-induced Defects on Metals and Silicon by Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy
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The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.
KeywordsPositron annihilation spectroscopy X-ray irradiation Defects Metals Semiconductor
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