Journal of the Korean Physical Society

, Volume 73, Issue 12, pp 1879–1883 | Cite as

Analysis of Deep-Trap States in GaN/InGaN Ultraviolet Light-Emitting Diodes after Electrical Stress

  • Seonghoon Jeong
  • Hyunsoo Kim
  • Sung-Nam Lee


We analyzed the deep-trap states of GaN/InGaN ultraviolet light-emitting diodes (UV LEDs) before and after electrical stress. After electrical stress, the light output power dropped by 5.5%, and the forward leakage current was increased. The optical degradation mechanism could be explained based on the space-charge-limited conduction (SCLC) theory. Specifically, for the reference UV LED (before stress), two sets of deep-level states which were located 0.26 and 0.52 eV below the conduction band edge were present, one with a density of 2.41 × 1016 and the other with a density of 3.91×1016 cm −3. However, after maximum electrical stress, three sets of deep-level states, with respective densities of 1.82×1016, 2.32×1016 cm −3, 5.31×1016 cm −3 were found to locate at 0.21, 0.24, and 0.50 eV below the conduction band. This finding shows that the SCLC theory is useful for understanding the degradation mechanism associated with defect generation in UV LEDs.


Ultraviolet Light-emitting diodes Degradation Deep-level states Space-charge-limited conduction Leakage current Reliability 


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Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  1. 1.School of Semiconductor and Chemical Engineering, Semiconductor Physics Research CenterChonbuk National UniversityJeonjuKorea
  2. 2.Department of Nano-Optical EngineeringKorea Polytechnic UniversitySiheungKorea

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