Structural and Temperature-Dependent Electrical/Optical Behaviors of Hot-Wall Deposited BaGa2Se4 Layers
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The characteristic behavior of hot-wall deposited BaGa2Se4 layers was investigated as a function of temperature. The structural quality of the layers was found to be affected by tensile strain due to the coincidence-lattice mismatch. The carrier mobility showed an aspect of two scattering mechanisms. As the temperature was increased to 100 K, the mobility increased as a function of T1 due to impurity scattering. Also, at temperatures higher than 100 K, its behavior was reduced to two different-temperature slopes caused by lattice scattering. One was a function of T−3/2 at T > 200 K, and the other was a function of T−1/2 for 100 < T > 200 K. From the behavior of log n(T) versus 1/T, three donor-trap levels due to native defects were observed. By tracking the spectral photocurrent (PC) behavior with decreasing temperature, we found that the three PCpeak positions shifted toward shorter wavelengths and their intensities were dramatically decreased. These spectral PC peaks were due to the band-to-band transition. These band-gap variation were well matched by Eg(T) = Eg(0)−2.06×10 −3T2/(T +230.7). By the selection rule, the crystal-field and the spin-orbit splitting were found to be 0.2031 and −0.2259 eV, respectively. In the log Jph versus 1/T plot, we found that the spectral PC-intensity behavior was related to two donor-trap levels by comparing with the carrier concentration results. In conclusion, the dramatic decrease in the spectral PC intensity was attributed to trapping centers.
KeywordsBaGa2Se4 Photoconductivity Crystal-field effect Hall effect Temperature dependence
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