Electronics and Optoelectronics Based on Two-Dimensional Materials
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Abstract
Recently, with the emergence of two-dimensional (2D) materials such as graphene, transition metal dichalcogenides, and hexagonal boron nitride, various studies on electronic and optoelectronic devices based on them have been carried out. In this review article, we discuss the representative studies on electronic and optoelectronic devices based on 2D materials and their heterostructures. Accordingly, we briefly overview the unique properties of typical 2D materials and their van der Waals heterostructures and thereafter present an in-depth review of their advantages for electronics and optoelectronics. The opportunities and challenges presented by them for future electronics and optoelectronics are discussed.
Keywords
2D materials Van der Waals heterostructure Electronic Optoelectronic devicesPreview
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- [1]D. Jariwala, V. K. Sangwan, L. J. Lauhon, T. J. Marks and M. C. Hersam, ACS Nano 8, 1102 (2014).CrossRefGoogle Scholar
- [2]M. Buscema, J. O. Island, D. J. Groenendijk, S. I. Blanter, G. A. Steele, H. S. van der Zant and A. Castellanos-Gomez, Chem. Soc. Rev. 44, 3691 (2015).CrossRefGoogle Scholar
- [3]A. K. Geim and I. V Grigorieva, Nature 499, 419 (2013).CrossRefGoogle Scholar
- [4]F. H. L. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello and M. Polini, Nat. Nanotechnol. 9, 780 (2014).ADSCrossRefGoogle Scholar
- [5]G. Fiori, F. Bonaccorso, G. Iannaccone, T. Palacios, D. Neumaier, A. Seabaugh, S. K. Banerjee and L. Colombo, Nat. Nanotechnol. 9, 768 (2014).ADSCrossRefGoogle Scholar
- [6]K. S. Novoselov, A. Mishchenko, A. Carvalho and A. H. C. Neto, Science 353, aac9439 (2016).CrossRefGoogle Scholar
- [7]D. Jariwala, T. J. Marks and M. C. Hersam, Nat. Mater. 16, 170 (2017).ADSCrossRefGoogle Scholar
- [8]M. Chhowalla, D. Jena and H. Zhang, Nat. Rev. Mater. 1, 1 (2016).CrossRefGoogle Scholar
- [9]S. Z. Butler et al., ACS Nano 7, 2898 (2011).CrossRefGoogle Scholar
- [10]D. L. Duong, S. J. Yun and Y. H. Lee, ACS Nano 11, 11803 (2017).CrossRefGoogle Scholar
- [11]A. K. Geim and K. S. Novoselov, Nat. Mater. 6, 183 (2007).ADSCrossRefGoogle Scholar
- [12]K. S. Novoselov, Science 306, 666 (2004).ADSCrossRefGoogle Scholar
- [13]Y. B. Zhang, Y. W. Tan, H. L. Stormer and P. Kim, Nature 438, 201 (2005).ADSCrossRefGoogle Scholar
- [14]K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, M. I. Katsnelson, I. V. Grigorieva, S. V. Dubonos and A. A. Firsov, Nature 438, 197 (2005).ADSCrossRefGoogle Scholar
- [15]S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak and A. K. Geim, Phys. Rev. Lett. 100, 11 (2008).Google Scholar
- [16]J. M. Dawlaty, S. Shivaraman, J. Strait, P. George, M. Chandrashekhar, F. Rana, M. G. Spencer, D. Veksler and Y. Chen, Appl. Phys. Lett. 93, 13905 (2008).CrossRefGoogle Scholar
- [17]R. R. Nair, P. Blake, A. N. Grigorenko, K. S. Novoselov, T. J. Booth, T. Stauber, N. M. R. Peres and A. K. Geim, Science 320, 1308 (2008).ADSCrossRefGoogle Scholar
- [18]C. Lee, X. Wei, J. W. Kysar and J. Hone, Science 321, 385 (2008).ADSCrossRefGoogle Scholar
- [19]L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu and D. Feng, Nat. Nanotechnol. 9, 1 (2014).CrossRefGoogle Scholar
- [20]F. Xia, H. Wang and Y. Jia, Nat. Commun. 5, 1 (2014).ADSGoogle Scholar
- [21]L. Li, F. Yang et al., Nat. Nanotechnol. 11, 593 (2016).ADSCrossRefGoogle Scholar
- [22]G. H. Lee, Y. J. Yu, C. Lee, C. Dean, K. L. Shepard, P. Kim and J. Hone, Appl. Phys. Lett. 99, 1 (2011).Google Scholar
- [23]S. M. Kim et al., Nat. Commun. 6, 8662 (2015).CrossRefGoogle Scholar
- [24]L. Wang et al., Science 342, 614 (2013).ADSCrossRefGoogle Scholar
- [25]F. Withers et al., Nat. Mater. 14, 301 (2015).ADSCrossRefGoogle Scholar
- [26]X. Cui et al., Nat. Nanotechnol. 10, 534 (2015).ADSCrossRefGoogle Scholar
- [27]L. Britnell et al., Science 335, 947 (2012).ADSCrossRefGoogle Scholar
- [28]J. Wu et al., Nat. Nanotechnol. 12, 530 (2017).ADSCrossRefGoogle Scholar
- [29]B. Huang et al., Nature 546, 270 (2017).ADSCrossRefGoogle Scholar
- [30]K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V Khotkevich, S. V Morozov and A. K. Geim, Proc. Natl. Acad. Sci. U. S. A. 102, 10451 (2005).ADSCrossRefGoogle Scholar
- [31]B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti and A. Kis, Nat. Nanotechnol. 6, 147 (2011).ADSCrossRefGoogle Scholar
- [32]J. N. Coleman et al., Science 331, 568 (2011).ADSCrossRefGoogle Scholar
- [33]J. Feng, L. Peng, C. Wu, X. Sun, S. Hu, C. Lin, J. Dai, J. Yang and Y. Xie, Adv. Mater. 24, 1969 (2012).CrossRefGoogle Scholar
- [34]K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi and B. H. Hong, Nature 457, 706 (2009).ADSCrossRefGoogle Scholar
- [35]X. Li et al., Science 324, 1312 (2009).ADSCrossRefGoogle Scholar
- [36]G. H. Han et al., Nat. Commun. 6, 6128 (2015).CrossRefGoogle Scholar
- [37]J-H. Lee et al., Science 344, 286 (2014).ADSCrossRefGoogle Scholar
- [38]S. J. Yun et al., ACS Nano 9, 5510 (2015).CrossRefGoogle Scholar
- [39]K. Kang, S. Xie, L. Huang, Y. Han, P. Y. Huang, K. F. Mak, C-J. Kim, D. Muller and J. Park, Nature 520, 656 (2015).ADSCrossRefGoogle Scholar
- [40]V. L. Nguyen et al., Adv. Mater. 27, 1376 (2015).CrossRefGoogle Scholar
- [41]Y. Zhang, L. Zhang and C. Zhou, Acc. Chem. Res. 46, 2329 (2013).CrossRefGoogle Scholar
- [42]T. Jurca, M. J. Moody, A. Henning, J. D. Emery, B. Wang, J. M. Tan, T. L. Lohr, L. J. Lauhon and T. J. Marks, Angew. Chemie-Int. Ed. 56, 4991 (2017).CrossRefGoogle Scholar
- [43]J. J. Pyeon, S. H. Kim, D. S. Jeong, S-H. Baek, C-Y. Kang, J-S. Kim and S. K. Kim, Nanoscale. 8, 10792 (2016).ADSCrossRefGoogle Scholar
- [44]D. L. Duong et al., Nature 490, 235 (2012).ADSCrossRefGoogle Scholar
- [45]L. Karvonen et al., Nat. Commun. 8, 15714 (2017).ADSCrossRefGoogle Scholar
- [46]J. Kotakoski, C. Mangler and J. C. Meyer, Nat. Commun. 5, 1 (2014).CrossRefGoogle Scholar
- [47]J. Hong, C. Jin, J. Yuan and Z. Zhang, Adv. Mater. 24, 1606434 (2017).CrossRefGoogle Scholar
- [48]T. Ma, Z. Liu, J. Wen, Y. Gao, X. Ren, H. Chen, C. Jin, X. L. Ma, N. Xu, H. M. Cheng and W. Ren, Nat. Commun. 8, 1 (2017).ADSCrossRefGoogle Scholar
- [49]F. Banhart, J. Kotakoski and A. V. Krasheninnikov, ACS Nano 5, 26 (2011).CrossRefGoogle Scholar
- [50]T. H. Ly, M. H. Chiu, M. Y. Li, J. Zhao, D. J. Perello, M. O. Cichocka, H. M. Oh, S. H. Chae, H. Y. Jeong, F. Yao, L. J. Li and Y. H. Lee, 8, 11401 (2014).Google Scholar
- [51]H. Y. Jeong et al., ACS Nano 10, 770 (2016).CrossRefGoogle Scholar
- [52]A. W. Tsen et al., Science 336, 1143 (2012).ADSCrossRefGoogle Scholar
- [53]S. H. Song, M. K. Joo, M. Neumann, H. Kim and Y. H. Lee, Nat. Commun. 8, 1 (2017).CrossRefGoogle Scholar
- [54]T. H. Ly, D. J. Perello, J. Zhao, Q. Deng, H. Kim, G. H. Han, S. H. Chae, H. Y. Jeong and Y. H. Lee, Nat. Commun. 7, 10426 (2016).ADSCrossRefGoogle Scholar
- [55]M-Y. Li et al., Science 349, 524 (2015).ADSCrossRefGoogle Scholar
- [56]X. Duan et al., Nat. Nanotechnol. 9, 1024 (2014).ADSCrossRefGoogle Scholar
- [57]P. K. Sahoo, S. Memaran, Y. Xin, L. Balicas and H. R. Gutiérrez, Nature 553, 63 (2018).ADSCrossRefGoogle Scholar
- [58]M. Mahjouri-Samani et al., Nat. Commun. 6, 1 (2015).CrossRefGoogle Scholar
- [59]C. Huang, S. Wu, A. M. Sanchez, J. J. P. Peters, R. Beanland, J. S. Ross, P. Rivera, W. Yao, D. H. Cobden and X. Xu, Nat. Mater. 13, 1096 (2014).CrossRefGoogle Scholar
- [60]Y. Gong et al., Nat. Mater. 13, 1135 (2014).ADSCrossRefGoogle Scholar
- [61]S. Wang, X. Wang and J. H. Warner, ACS Nano 9, 5246 (2015).CrossRefGoogle Scholar
- [62]K. Kang, K. H. Lee, Y. Han, H. Gao, S. Xie, D. A. Muller and J. Park, Nature 550, 229 (2017).ADSCrossRefGoogle Scholar
- [63]M. M. Waldrop, Nat. News. 530, 144 (2016).CrossRefGoogle Scholar
- [64]K. Bjorkqvist and T. Arnborg, Phys. Scr. 24, 418 (1981).ADSCrossRefGoogle Scholar
- [65]G. E. Moore, in IEDM Tech. Dig. (1975), p. 11.Google Scholar
- [66]M. Lundstrom, Science 299, 210 (2003).CrossRefGoogle Scholar
- [67]S. B. Desai et al., Science 354, 99 (2016).ADSCrossRefGoogle Scholar
- [68]V. Podzorov, M. E. Gershenson, C. Kloc, R. Zeis and E. Bucher, Appl. Phys. Lett. 84, 3301 (2004).ADSCrossRefGoogle Scholar
- [69]K. F. Mak, C. Lee, J. Hone, J. Shan and T. F. Heinz, Phys. Rev. Lett. 105, 2 (2010).CrossRefGoogle Scholar
- [70]S. Cho et al., Science 349, 625 (2015).ADSCrossRefGoogle Scholar
- [71]D. H. Keum, S. Cho, J. H. Kim, D. H. Choe, H. J. Sung, M. Kan, H. Kang, J. Y. Hwang, S. W. Kim, H. Yang, K. J. Chang and Y. H. Lee, Nat. Phys. 11, 482 (2015).CrossRefGoogle Scholar
- [72]D. J. Perello, S. H. Chae, S. Song and Y. H. Lee, Nat. Commun. 6, 1 (2015).CrossRefGoogle Scholar
- [73]A. Dathbun, Y. Kim, S. Kim, Y. Yoo, M. S. Kang, C. Lee and J. H. Cho, Nano Lett. 17, 2999 (2017).ADSCrossRefGoogle Scholar
- [74]E. Zhang, Y. Jin, X. Yuan, W. Wang, C. Zhang, L. Tang, S. Liu, P. Zhou, W. Hu and F. Xiu, Adv. Funct. Mater. 25, 4076 (2015).CrossRefGoogle Scholar
- [75]Y. C. Lin et al., ACS Nano 9, 11249 (2015).CrossRefGoogle Scholar
- [76]W. Cao, W. Liu, J. Kang and K. Banerjee, IEEE Electron Device Lett. 37, 1497 (2016).ADSCrossRefGoogle Scholar
- [77]Y. Liu, J. Guo, Y. Wu, E. Zhu, N. O. Weiss, Q. He, H. Wu, H. C. Cheng, Y. Xu, I. Shakir, Y. Huang and X. Duan, Nano Lett. 16, 6337 (2016).ADSCrossRefGoogle Scholar
- [78]A. Nourbakhsh et al., Nano Lett. 16, 7798 (2016).ADSCrossRefGoogle Scholar
- [79]K. Xu et al., Nano Lett. 17, 1065 (2017).ADSCrossRefGoogle Scholar
- [80]L. Xie et al., Adv. Mater. 29, 1 (2017).Google Scholar
- [81]F. Zhang and J. Appenzeller, Nano Lett. 15, 301 (2015).ADSCrossRefGoogle Scholar
- [82]A-J. Cho, S. Yang, K. Park, S. D. Namgung, H. Kim and J-Y. Kwon, ECS Solid State Lett. 3, Q67 (2014).ADSCrossRefGoogle Scholar
- [83]D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid and C. N. R. Rao, ACS Nano 6, 5635 (2012).CrossRefGoogle Scholar
- [84]J. Shu, G. Wu, Y. Guo, B. Liu, X. Wei and Q. Chen, Nanoscale. 8, 3049 (2016).ADSCrossRefGoogle Scholar
- [85]X. Zou, J. Wang, C-H. Chiu, Y. Wu, X. Xiao, C. Jiang, W-W.Wu, L.Mai, T. Chen, J. Li, J. C. Ho and L. Liao, Adv. Mater. 26, 6255 (2014).CrossRefGoogle Scholar
- [86]N. Levy, S. A. Burke, K. L. Meaker, M. Panlasigui, A. Zettl, F. Guinea, A. H. C. Neto and M. F. Crommie, Science 329, 544 (2010).ADSCrossRefGoogle Scholar
- [87]S. J. Haigh et al., Nat. Mater. 11, 764 (2012).ADSCrossRefGoogle Scholar
- [88]F. Pizzocchero, L. Gammelgaard, B. S. Jessen, J. M. Caridad, L.Wang, J. Hone, P. Bggild and T. J. Booth, Nat. Commun. 7, 11894 (2016).ADSCrossRefGoogle Scholar
- [89]A. V. Kretinin et al., Nano Lett. 14, 3270 (2014).ADSCrossRefGoogle Scholar
- [90]E. Khestanova, F. Guinea, L. Fumagalli, A. K. Geim and I. V. Grigorieva, Nat. Commun. 7, 12587 (2016).ADSCrossRefGoogle Scholar
- [91]Q. A. Vu, S. Fan, S. H. Lee, M-K. Joo, W. J. Yu and Y. H. Lee, 2D Mater. 5, 031001 (2018).CrossRefGoogle Scholar
- [92]H. Yang, J. Heo, S. Park, H. J. Song, D. H. Seo, K-E. Byun, P. Kim, I. Yoo, H-J. Chung and K. Kim, Science 336, 1140 (2012).ADSCrossRefGoogle Scholar
- [93]T. Georgiou et al., Nat. Nanotechnol. 8, 100 (2013).ADSCrossRefGoogle Scholar
- [94]W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang and X. Duan, Nat. Mater. 12, 246 (2013).ADSCrossRefGoogle Scholar
- [95]Y. S. Shin, K. Lee, Y. R. Kim, H. Lee, I. M. Lee, W. T. Kang, B. H. Lee, K. Kim, J. Heo, S. Park, Y. H. Lee and W. J. Yu, Adv. Mater. 1704435, 1 (2018).Google Scholar
- [96]A. M. Ionescu and H. Riel, Nature 479, 329 (2011).ADSCrossRefGoogle Scholar
- [97]O. M. Nayfeh, J. L. Hoyt and D. A. Antoniadis, IEEE Trans. Electron Devices. 56, 2264 (2009).ADSCrossRefGoogle Scholar
- [98]Y. Yang et al., in Tech. Dig.-Int. Electron Devices Meet. IEDM (2012), p. 379.Google Scholar
- [99]D. Leonelli, A. Vandooren, R. Rooyackers, A. S. Verhulst, S. De Gendt, M. M. Heyns and G. Groeseneken, Jpn. J. Appl. Phys. 49, 04DC10 (2010).CrossRefGoogle Scholar
- [100]H. Kam, D. T. Lee, R. T. Howe and T-J. King, in IEEE Int. Devices Meet. 2005. IEDM Tech. Dig. (2005), p. 463.Google Scholar
- [101]A. Rusu, G. A. Salvatore, D. Jiménez and A. M. Ionescu, in Tech. Dig.-Int. Electron Devices Meet. IEDM (2010), p. 395.Google Scholar
- [102]J. Jo, W. Y. Choi, J. D. Park, J. W. Shim, H. Y. Yu and C. Shin, Nano Lett. 15, 4553 (2015).ADSCrossRefGoogle Scholar
- [103]S. Salahuddin and S. Datta, Nano Lett. 8, 405 (2008).ADSCrossRefGoogle Scholar
- [104]J. Appenzeller, Y. M. Lin, J. Knoch and P. Avouris, Phys. Rev. Lett. 93, 1 (2004).CrossRefGoogle Scholar
- [105]M. O. Li, D. Esseni, J. J. Nahas, D. Jena and H. G. Xing, IEEE J. Electron Devices Soc. 3, 200 (2015).CrossRefGoogle Scholar
- [106]J. Xu, J. Jia, S. Lai, J. Ju and S. Lee, Appl. Phys. Lett. 110, 033103 (2017).ADSCrossRefGoogle Scholar
- [107]X. Yan, C. Liu, C. Li, W. Bao, S. Ding, D. W. Zhang and P. Zhou, Small. 13, 1 (2017).Google Scholar
- [108]T. Roy, M. Tosun, M. Hettick, G. H. Ahn, C. Hu and A. Javey, Appl. Phys. Lett. 108, 083111 (2016).ADSCrossRefGoogle Scholar
- [109]D. Sarkar, X. Xie, W. Liu, W. Cao, J. Kang, Y. Gong, S. Kraemer, P. M. Ajayan and K. Banerjee, Nature 526, 91 (2015).ADSCrossRefGoogle Scholar
- [110]M. Si, C-J. Su, C. Jiang, N. J. Conrad, H. Zhou, K. D. Maize, G. Qiu, C-T. Wu, A. Shakouri, M. A. Alam and P. D. Ye, Nat. Nanotechnol. 13, 24 (2017).ADSCrossRefGoogle Scholar
- [111]F. A. McGuire, Y. C. Lin, K. Price, G. B. Rayner, S. Khandelwal, S. Salahuddin and A. D. Franklin, Nano Lett. 17, 4801 (2017).ADSCrossRefGoogle Scholar
- [112]D. Kahng and S. M. Sze, The Bell System Technical Journal 1, 1288 (1967).CrossRefGoogle Scholar
- [113]A. Misra, H. Kalita, M. Waikar, A. Gour, M. Bhaisare, M. Khare, M. Aslam and A. Kottantharayil, 2012 4th IEEE Int. Mem. Work. IMW 2012 (2012), p. 6.Google Scholar
- [114]A. J. Hong et al., ACS Nano 5, 7812 (2011).CrossRefGoogle Scholar
- [115]R. Yang, C. Zhu, J. Meng, Z. Huo, M. Cheng, D. Liu, W. Yang, D. Shi, M. Liu and G. Zhang, Sci. Rep. 3, 1 (2013).Google Scholar
- [116]S. S. Joo, J. Kim, S. S. Kang, S. Kim, S-H. Choi and S. W. Hwang, Nanotechnology. 25, 255203 (2014).CrossRefGoogle Scholar
- [117]Y. R. Kim, Y. E. Jo, Y. S. Shin, W. T. Kang, Y. H. Sung, U. Y. Won, Y. H. Lee and W. J. Yu, Appl. Phys. Lett. 106, 1 (2015).Google Scholar
- [118]S. Bertolazzi, D. Krasnozhon and A. Kis, ACS Nano 7, 3246 (2013).CrossRefGoogle Scholar
- [119]M. S. Choi, G-H. Lee, Y-J. Yu, D-Y. Lee, S. H. Lee, P. Kim, J. Hone and W. J. Yoo, Nat. Commun. 4, 1624 (2013).CrossRefGoogle Scholar
- [120]C. Ko, Y. Lee, Y. Chen, J. Suh, D. Fu, A. Suslu, S. Lee, J. D. Clarkson, H. S. Choe, S. Tongay, R. Ramesh and J. Wu, Adv. Mater. 28, 2923 (2016).CrossRefGoogle Scholar
- [121]E. Zhang, W. Wang, C. Zhang, Y. Jin, G. Zhu, Q. Sun, D. W. Zhang, P. Zhou and F. Xiu, ACS Nano 9, 612 (2015).CrossRefGoogle Scholar
- [122]D. Li, X. Wang, Q. Zhang, L. Zou, X. Xu and Z. Zhang, Adv. Funct. Mater. 25, 7360 (2015).CrossRefGoogle Scholar
- [123]J. Wang, X. Zou, X. Xiao, L. Xu, C. Wang, C. Jiang, J. C. Ho, T. Wang, J. Li and L. Liao, Small. 11, 208 (2015).CrossRefGoogle Scholar
- [124]D. Li, M. Chen, Z. Sun, P. Yu, Z. Liu, P. M. Ajayan and Z. Zhang, Nat. Nanotechnol. 12, 901 (2017).ADSCrossRefGoogle Scholar
- [125]Q. A. Vu et al., Nat. Commun. 7, 12725 (2016).ADSCrossRefGoogle Scholar
- [126]A. Star, Y. Lu, K. Bradley and G. Grüner, Nano Lett. 4, 1587 (2004).ADSCrossRefGoogle Scholar
- [127]J. Borghetti, V. Derycke, S. Lenfant, P. Chenevier, A. Filoramo, M. Goffman, D. Vuillaume and J. P. Bourgoin, Adv. Mater. 18, 2535 (2006).CrossRefGoogle Scholar
- [128]S. Lei et al., Nano Lett. 15, 259 (2015).ADSCrossRefGoogle Scholar
- [129]K. Roy, M. Padmanabhan, S. Goswami, T. P. Sai, G. Ramalingam, S. Raghavan and A. Ghosh, Nat. Nanotechnol. 8, 826 (2013).ADSCrossRefGoogle Scholar
- [130]J. Lee, S. Pak, Y-W. Lee, Y. Cho, J. Hong, P. Giraud, H. S. Shin, S. M. Morris, J. I. Sohn, S. Cha and J. M. Kim, Nat. Commun. 8, 14734 (2017).ADSCrossRefGoogle Scholar
- [131]V. K. Sangwan, D. Jariwala, I. S. Kim, K-S. Chen, T. J. Marks, L. J. Lauhon and M. C. Hersam, Nat. Nanotechnol. 10, 403 (2015).ADSCrossRefGoogle Scholar
- [132]T. E. Hartman, J. C. Blair and R. Bauer, J. Appl. Phys. 37, 2468 (1966).ADSCrossRefGoogle Scholar
- [133]H. S. P. Wong, S. Raoux, S. Kim, J. L. Liang, J. P. Reifenberg, B. Rajendran, M. Asheghi and K. E. Goodson, Proc. IEEE. 98, 2201 (2010).CrossRefGoogle Scholar
- [134]C. C. Yeh, T. P. Ma, N. Ramaswamy, N. Rocklein, D. Gealy, T. Graettinger and K. Min, Appl. Phys. Lett. 91, 113521 (2007).ADSCrossRefGoogle Scholar
- [135]D. Ielmini, Phys. Rev. B. 78, 035308 (2008).ADSCrossRefGoogle Scholar
- [136]M. Wang, S. Cai, C. Pan, C. Wang, X. Lian, Y. Zhuo, K. Xu, T. Cao, X. Pan, B.Wang, S-J. Liang, J. J. Yang, P. Wang and F. Miao, Nat. Electron. 1, 130 (2018).CrossRefGoogle Scholar
- [137]M. Ghoneim and M. Hussain, Electronics. 4, 424 (2015).CrossRefGoogle Scholar
- [138]K. Choi, Y. T. Lee and S. Im, Nano Today. 11, 626 (2016).CrossRefGoogle Scholar
- [139]Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen and H. Zhang, ACS Nano 6, 74 (2012).CrossRefGoogle Scholar
- [140]H. Zhang, A. V. Babichev, G. Jacopin, P. Lavenus, F. H. Julien, A. Yu. Egorov, J. Zhang, T. Pauporté and M. Tchernycheva, J. Appl. Phys. 114, 234505 (2013).ADSCrossRefGoogle Scholar
- [141]A. Zhang, H. Kim, J. Cheng and Y-H. Lo, Nano Lett. 10, 2117 (2010).ADSCrossRefGoogle Scholar
- [142]O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic and A. Kis, Nat. Nanotechnol. 8, 497 (2013).ADSCrossRefGoogle Scholar
- [143]B. W. H. Baugher, H. O. H. Churchill, Y. Yang and P. Jarillo-Herrero, Nat. Nanotechnol. 9, 262 (2014).ADSCrossRefGoogle Scholar
- [144]A. Pospischil, M. M. Furchi and T. Mueller, Nat. Nanotechnol. 9, 257 (2014).ADSCrossRefGoogle Scholar
- [145]J. S. Ross et al., Nat. Nanotechnol. 9, 268 (2014).ADSCrossRefGoogle Scholar
- [146]M. S. Choi, D. Qu, D. Lee, X. Liu, K. Watanabe, T. Taniguchi and W. J. Yoo, ACS Nano 8, 9332 (2014).CrossRefGoogle Scholar
- [147]Z. Wang, F. Wang, L. Yin, Y. Huang, K. Xu, F. Wang, X. Zhan and J. He, Nanoscale. 8, 13245 (2016).ADSCrossRefGoogle Scholar
- [148]Y-Q. Bie et al., Nat. Nanotechnol. 12, 1124 (2017).ADSCrossRefGoogle Scholar
- [149]H. Yuan et al., Nat. Nanotechnol. 10, 707 (2015).ADSCrossRefGoogle Scholar
- [150]M. Buscema, D. J. Groenendijk, G. A. Steele, H. S. J. Van Der Zant and A. Castellanos-Gomez, Nat. Commun. 5, 1 (2014).CrossRefGoogle Scholar
- [151]Y. Liu, Y. Cai, G. Zhang, Y. W. Zhang and K. W. Ang, Adv. Funct. Mater. 27, 1 (2017).ADSGoogle Scholar
- [152]D. Kufer and G. Konstantatos, Adv. Mater. 27, 176 (2015).CrossRefGoogle Scholar
- [153]C. Chen, H. Qiao, S. Lin, C. Man Luk, Y. Liu, Z. Xu, J. Song, Y. Xue, D. Li, J. Yuan, W. Yu, C. Pan, S. P. Lau and Q. Bao, Sci. Rep. 5, 1 (2015).Google Scholar
- [154]D. De Fazio et al., ACS Nano 10, 8252 (2016).CrossRefGoogle Scholar
- [155]W. Zhang et al., Sci. Rep. 4, 3826 (2014).CrossRefGoogle Scholar
- [156]L. Britnell et al., Science 340, 1311 (2013).ADSCrossRefGoogle Scholar
- [157]W. J. Yu, Y. Liu, H. Zhou, A. Yin, Z. Li, Y. Huang and X. Duan, Nat. Nanotechnol. 8, 952 (2013).ADSCrossRefGoogle Scholar
- [158]M. Massicotte et al., Nat. Nanotechnol. 11, 1 (2015).CrossRefGoogle Scholar
- [159]W. J. Yu et al., Nat. Commun. 7, 13278 (2016).ADSCrossRefGoogle Scholar
- [160]C-H. Lee et al., Nat. Nanotechnol. 9, 1 (2014).CrossRefGoogle Scholar
- [161]D. H. Luong, H. S. Lee, G. P. Neupane, S. Roy, G. Ghimire, J. H. Lee, Q. A. Vu and Y. H. Lee, Adv. Mater. 29, 1 (2017).ADSCrossRefGoogle Scholar
- [162]Q. A. Vu, J. H. Lee, V. L. Nguyen, Y. S. Shin, S. C. Lim, K. Lee, J. Heo, S. Park, K. Kim, Y. H. Lee and W. J. Yu, Nano Lett. 17, 453 (2017).ADSCrossRefGoogle Scholar
- [163]Y. Xu, C. Cheng, S. Du, J. Yang, B. Yu, J. Luo, W. Yin, E. Li, S. Dong, P. Ye and X. Duan, ACS Nano 10, 4895 (2016).CrossRefGoogle Scholar
- [164]D. S. Schulman, A. J. Arnold and S. Das, Chem. Soc. Rev. 47, 3037 (2018).CrossRefGoogle Scholar
- [165]A. Allain, J. Kang, K. Banerjee and A. Kis, Nat. Mater. 14, 1195 (2015).ADSCrossRefGoogle Scholar
- [166]M. Farmanbar and G. Brocks, Phys. Rev. B-Condens. Matter Mater. Phys. 91, 1 (2015).CrossRefGoogle Scholar
- [167]X. Cui et al., Nano Lett. 17, 4781 (2017).ADSCrossRefGoogle Scholar
- [168]J. Wang, Q. Yao, C. W. Huang, X. Zou, L. Liao, S. Chen, Z. Fan, K. Zhang, W. Wu, X. Xiao, C. Jiang and W. W. Wu, Adv. Mater. 28, 8302 (2016).CrossRefGoogle Scholar
- [169]Y. Liu, N. O. Weiss, X. Duan, H-C. Cheng, Y. Huang and X. Duan, Nat. Rev. Mater. 1, 16042 (2016).ADSCrossRefGoogle Scholar