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Journal of the Korean Physical Society

, Volume 72, Issue 12, pp 1467–1483 | Cite as

Recent Progress in Potassium Sodium Niobate Lead-free Thin Films

  • Hae Jin Seog
  • Aman Ullah
  • Chang Won Ahn
  • Ill Won Kim
  • Sun Young Lee
  • Jungmin Park
  • Hai Joon Lee
  • Sung Sik Won
  • Seung-Hyun Kim
Review Articles
  • 348 Downloads
Part of the following topical collections:
  1. JKPS 50th Anniversary Reviews

Abstract

Lead-free potassium sodium niobate (KNN)-based thin films have attracted much interest in replacing current lead zirconate titanate (PZT)-based piezoelectric thin films in micro electromechanical (MEMS) devices due to the increasing awareness and legislation concerning lead oxide toxicity. Recently, promising piezoelectric performance has been achieved in KNN-based thin films by compositional modification. Over the last decade, our group has concentrated on the fabrication of KNN-based thin films using sol-gel and RF sputtering techniques and has obtained encouraging results. However, controlling the complex stoichiometric compositions in KNN-based thin films is still challenging due to volatilization of alkaline elements and the high leakage current density. In the current review, the available synthetic approaches, chemical modification strategies, and stabilizing agents used to try and overcome these challenges and improve the piezoelectric properties of KNN-based thin films are reviewed. Herein, we systematically describe the recent advancements of the ferroelectric and piezoelectric properties of KNN-based thin films and summarize the properties of KNN-based thin films fabricated by various techniques, such as sol-gel and RF magnetron sputtering.

Keywords

Na0.5K0.5NbO3-based Ferroelectric Piezoelectric Lead-free Films 

References

  1. [1]
    A. J. Moulson and J. M. Herbert, Electroceramics: materials, properties, applications (John Wiley & Sons, 2003).Google Scholar
  2. [2]
    K. Uchinoin, Present status of piezoelectric/electrostrictive actuators and remaining problems Piezoelectric Actuators and Ultrasonic Motors, (Boston, MA: Kluwer, 1997).Google Scholar
  3. [3]
    S-E. Park and T. R. Shrout, J. Appl. Phys. 82, 1804 (1997).ADSGoogle Scholar
  4. [4]
    W. Jo, R. Dittmer, M. Acosta, J. Zang, C. Groh, E. Sapper, K. Wang and J. Rödel, J. Electroceram. 29, 71 (2012).Google Scholar
  5. [5]
    T. Yamamoto, Jpn. J. Appl. Phys. 35, 5104 (1996).ADSGoogle Scholar
  6. [6]
    E. Sawaguchi, J. Phys. Soc. Jpn. 8, 615 (1953).ADSGoogle Scholar
  7. [7]
    D. Damjanovic, Reports on Progress in Phys. 61, 1267 (1998).ADSGoogle Scholar
  8. [8]
    G. H. Haertling, J. Am. Ceram. Soc. 82, 797 (1999).Google Scholar
  9. [9]
    R. Directive, Off. J. Eur. Union 13, L37 (2003).Google Scholar
  10. [10]
    H. A. T. Directive, Off. J. Eur. Comm. 14, L315 (2000).Google Scholar
  11. [11]
    C. W. Ahn, C-H. Hong, B-Y. Choi, H-P. Kim, H-S. Han, Y. Hwang, W. Jo, K. Wang, J-F. Li and J-S. Lee, J. Korean Phys. Soc. 68, 1481 (2016).ADSGoogle Scholar
  12. [12]
    J. Rödel, W. Jo, K. T. Seifert, E. M. Anton, T. Granzow and D. Damjanovic, J. Am. Ceram. Soc. 92, 1153 (2009).Google Scholar
  13. [13]
    G. Shirane, R. Newnham and R. Pepinsky, Phys. Rev. 96, 581 (1954).ADSGoogle Scholar
  14. [14]
    Z. Wang, D. Xiao, J. Wu, M. Xiao, F. Li and J. Zhu, J. Am. Ceram. Soc. 97, 688 (2014).Google Scholar
  15. [15]
    X. Cheng, J. Wu, X. Wang, B. Zhang, J. Zhu, D. Xiao, X. Wang and X. Lou, Appl. Phys. Lett. 103, 052906 (2013).ADSGoogle Scholar
  16. [16]
    K. Wang and J. F. Li, Adv. Func. Mater. 20, 1924 (2010).Google Scholar
  17. [17]
    J. Wu, Y. Wang, D. Xiao, J. Zhu and Z. Pu, Appl. Phys. Lett. 91, 132914 (2007).ADSGoogle Scholar
  18. [18]
    G. Haertling, J. Am. Ceram. Soc. 50, 329 (1967).Google Scholar
  19. [19]
    L. Egerton and D. M. Dillon, J. Am. Ceram. Soc. 42, 438 (1959).Google Scholar
  20. [20]
    J. Wu, D. Xiao and J. Zhu, Chem. rev. 115, 2559 (2015).Google Scholar
  21. [21]
    P. Li, J. Zhai, B. Shen, S. Zhang, X. Li, F. Zhu and X. Zhang, Adv. Mater. 30, 1705171 (2018).Google Scholar
  22. [22]
    J. S. Kim, C. W. Ahn, S. Y. Lee, A. Ullah and I. W. Kim, Curr. Appl. Phys. 11, S149 (2011).Google Scholar
  23. [23]
    Y. Saito, H. Takao, T. Tani, T. Nonoyama, K. Takatori, T. Homma, T. Nagaya and M. Nakamura, Nature 432, 84 (2004).ADSGoogle Scholar
  24. [24]
    W. Liang, W. Wu, D. Xiao and J. Zhu, J. Am. Ceram. Soc. 94, 4317 (2011).Google Scholar
  25. [25]
    K. H. Cho, H. Y. Park, C.W. Ahn, S. Nahm, K. Uchino, S. H. Park, H. G. Lee and H. J. Lee, J. Am. Ceram. Soc. 90, 1946 (2007).Google Scholar
  26. [26]
    E. Cross, Nature 432, 24 (2004).ADSGoogle Scholar
  27. [27]
    Y. Guo, K-I. Kakimoto and H. Ohsato, Appl. phys. lett. 85, 4121 (2004).ADSGoogle Scholar
  28. [28]
    Y. Guo, K-I. Kakimoto and H. Ohsato, Mater. Lett. 59, 241 (2005).Google Scholar
  29. [29]
    X. Wang, J. Wu, D. Xiao, J. Zhu, X. Cheng, T. Zheng, B. Zhang, X. Lou and X. Wang, J. Am. chem. soc. 136, 2905 (2014).Google Scholar
  30. [30]
    D. Xiao, J. Wu, L. Wu, J. Zhu, P. Yu, D. Lin, Y. Liao and Y. Sun, J. Mater. Sci. 44, 5408 (2009).ADSGoogle Scholar
  31. [31]
    J. F. Li, K. Wang, F. Y. Zhu, L. Q. Cheng and F. Z. Yao, J. Am. Ceram. Soc. 96, 3677 (2013).Google Scholar
  32. [32]
    N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Park and G. Stephenson, J. Appl. Phys. 100, 051606 (2006).ADSGoogle Scholar
  33. [33]
    P. Muralt, J. Am. Ceram. Soc. 91, 1385 (2008).Google Scholar
  34. [34]
    C-B. Eom and S. Trolier-McKinstry, Thin-film piezoelectric MEMS, Mrs Bulletin 37, 1007 (2012).Google Scholar
  35. [35]
    J-C. Yu and F-H. Lai, Ferroelectrics 263, 101 (2001).Google Scholar
  36. [36]
    A. Nickles, R. Ramesh, R. White and E. Haller, Integ. Ferroelectrics 10, 89 (1995).Google Scholar
  37. [37]
    C. Lee, T. Itoh and T. Suga, Thin solid films 299, 88 (1997).ADSGoogle Scholar
  38. [38]
    C-R. Cho, A. Grishin and B-M. Moon, Integ. Ferroelectrics 31, 35 (2000).Google Scholar
  39. [39]
    K. Tanaka, K-I. Kakimoto and H. Ohsato, J. cryst. growth 294, 209 (2006).ADSGoogle Scholar
  40. [40]
    T. Saito, H. Adachi and T. Wada, Jpn. J Appl. Phys. 44, L573 (2005).Google Scholar
  41. [41]
    K. Tanaka, K-I. Kakimoto, H. Ohsato and T. Iijima, Jpn. J. Appl. Phys. 46, 1094 (2007).ADSGoogle Scholar
  42. [42]
    Y. Nakashima, W. Sakamoto, H. Maiwa, T. Shimura and T. Yogo, Jpn. J. Appl. Phys. 46, L311 (2007).ADSGoogle Scholar
  43. [43]
    T. Saito, T. Wada, H. Adachi and I. Kanno, Jpn. J. Appl. Phys. 43, 6627 (2004).ADSGoogle Scholar
  44. [44]
    J. Ryu, J-J. Choi, B-D. Hahn, D-S. Park, W-H. Yoon and K-H. Kim, Appl. Phys. Lett. 90, 152901 (2007).ADSGoogle Scholar
  45. [45]
    C-R. Cho, Mater. Lett. 57, 781 (2002).Google Scholar
  46. [46]
    L. Wang, K. Yao and W. Ren, Appl. Phys. Lett. 93, 092903 (2008).ADSGoogle Scholar
  47. [47]
    J. Ryu, J-J. Choi, B-D. Hahn, D-S. Park and W-H. Yoon, Appl. Phys. Lett. 92, 012905 (2008).ADSGoogle Scholar
  48. [48]
    A. Safari and M. Abazari, IEEE transactions on ultrasonics, ferroelectrics and frequency control 57, 2165 (2010).Google Scholar
  49. [49]
    P. C. Goh, K. Yao and Z. Chen, Appl. Phys. Lett. 97, 102901 (2010).ADSGoogle Scholar
  50. [50]
    A. D. Handoko and G. K. Goh, Cryst. Eng. Comm. 15, 672 (2013).Google Scholar
  51. [51]
    C-R. Cho and A. Grishin, J. Appl. Phys. 87, 4439 (2000).ADSGoogle Scholar
  52. [52]
    K. Shibata, F. Oka, A. Ohishi, T. Mishima and I. Kanno, Appl. Phys. Express 1, 011501 (2008).ADSGoogle Scholar
  53. [53]
    C-R. Cho and A. Grishin, Appl. Phys. Lett. 75, 268 (1999).ADSGoogle Scholar
  54. [54]
    H. J. Lee, I. W. Kim, J. S. Kim, C. W. Ahn and B. H. Park, Appl. Phys. Lett. 94, 092902 (2009).ADSGoogle Scholar
  55. [55]
    C. W. Ahn, E. D. Jeong, S. Y. Lee, H. J. Lee, S. H. Kang and I. W. Kim, Appl. Phys. Lett. 93, 212905 (2008).ADSGoogle Scholar
  56. [56]
    K. Tanaka, H. Hayashi, K-I. Kakimoto, H. Ohsato and T. Iijima, Jpn. J. Appl. Phys. 46, 6964 (2007).ADSGoogle Scholar
  57. [57]
    Y. Nakashima, W. Sakamoto, T. Shimura and T. Yogo, Jpn. J. Appl. Phys. 46, 6971 (2007).ADSGoogle Scholar
  58. [58]
    L. Wang, K. Yao, P. C. Goh and W. Ren, J. Mater. Research 24, 3516 (2009).ADSGoogle Scholar
  59. [59]
    A. Kupec, B. Malic, J. Tellier, E. Tchernychova, S. Glinsek and M. Kosec, J. Am. Ceram. Soc. 95, 515 (2012).Google Scholar
  60. [60]
    G. Li, X-Q. Wu, W. Ren, P. Shi, X-F. Chen and X. Yao, Ceram. International 38, S279 (2012).Google Scholar
  61. [61]
    A. Kupec, H. Uršič, R. C. Frunzˇa, E. Tchernychova and B. Malič, J. Eur. Ceram. Soc. 35, 3507 (2015).Google Scholar
  62. [62]
    G. Li, X. Wu, W. Ren and P. Shi, Thin Solid Films 548, 556 (2013).ADSGoogle Scholar
  63. [63]
    C. Ahn, S. Lee, H. Lee, A. Ullah, J. Bae, E. Jeong, J. Choi, B. Park and I. Kim, J. Phys. D: Appl. Phys. 42, 215304 (2009).ADSGoogle Scholar
  64. [64]
    C. W. Ahn, H-I. Hwang, K. S. Lee, B. M. Jin, S. Park, G. Park, D. Yoon, H. Cheong, H. J. Lee and I. W. Kim, Jpn. J. Appl. Phys. 49, 095801 (2010).ADSGoogle Scholar
  65. [65]
    S. Y. Lee, J. S. Kim, C. W. Ahn, H. I. Hwang and I. W. Kim, Thin Solid Films 519, 947 (2010).ADSGoogle Scholar
  66. [66]
    X. Yan, W. Ren, X. Wu, P. Shi and X. Yao, J. Alloys Compd. 508, 129 (2010).Google Scholar
  67. [67]
    M. M. Akmal, A. Warikh, U. Azlan, N. Azmi, M. Salleh and M. Kasim, Ceram. Int. 44, 317 (2018).Google Scholar
  68. [68]
    S. Wiegand, S. Flege, O. Baake and W. Ensinger, J. Alloys Compd. 548, 38 (2013).Google Scholar
  69. [69]
    Q. Yu, J. F. Li, Y. Chen, L. Q. Cheng, W. Sun, Z. Zhou and Z. Wang, J. Am. Ceram. Soc. 97, 107 (2014).Google Scholar
  70. [70]
    S. Khartsev, A. Grishin, J. Andrèasson, J-H. Koh and J-S. Song, Integ. Ferroelectrics 55, 769 (2003).Google Scholar
  71. [71]
    X. Wang, S. Olafsson, L. D. Madsen, S. Rudner, I. P. Ivanov, A. Grishin and U. Helmersson, J. Materials Res. 17, 1183 (2002).ADSGoogle Scholar
  72. [72]
    J. Kim, I. Hwang, S. Hong, J. Lee, B. Park, A. C. Woo and N. Sahn, J. Korean Phys. Soc. 48, 1583 (2006).Google Scholar
  73. [73]
    J. S. Kim, H. J. Lee, S. Y. Lee, I. W. Kim and S. D. Lee, Thin Solid Films 518, 6390 (2010).ADSGoogle Scholar
  74. [74]
    H. J. Lee, I. W. Kim and B. M. Jin, J. Korean Phys. Soc. 56, 417 (2010).ADSGoogle Scholar
  75. [75]
    B-Y. Kim, T-G. Seong, I-T. Seo, J-S. Kim, C-Y. Kang, S-J. Yoon and S. Nahm, Acta. Materialia 60, 7034 (2012).Google Scholar
  76. [76]
    J. Wu and J. Wang, J. Appl. Phys. 106, 066101 (2009).ADSGoogle Scholar
  77. [77]
    T. Li, G. Wang, K. Li, G. Du, Y. Chen, Z. Zhou, D. Rémiens and X. Dong, Ceram. Int. 40, 1195 (2014).Google Scholar
  78. [78]
    S. Y. Lee, C. W. Ahn, A. Ullah, H. J. Seog, J. S. Kim, S. H. Bae and I. W. Kim, Curr. Appl. Phys. 11, S266 (2011).ADSGoogle Scholar
  79. [79]
    S. Y. Lee, H. J. Seog, C. W. Ahn, A. Ullah and I. W. Kim, Jpn. J. Appl. Phys. 51, 09MD03 (2012).Google Scholar
  80. [80]
    H. J. Seog, C. W. Ahn, S. Cho, K. E. Kim, C. H. Yang, T. Y. Koo, S. Y. Lee, J. P. Kim and I. W. Kim, Physica Status Solidi RRL 11, 1600235 (2017).ADSGoogle Scholar
  81. [81]
    J. Chen, Y. Luo, X. Ou, G. Yuan, Y. Wang, Y. Yang, J. Yin and Z. Liu, J. Appl. Phys. 113, 204105 (2013).ADSGoogle Scholar
  82. [82]
    M. Boota, E. P. Houwman, M. D. Nguyen, G. Lanzara and G. Rijnders, AIP Advances 6, 055303 (2016).ADSGoogle Scholar
  83. [83]
    J. Park, S. S. Won, C. W. Ahn and I. W. Kim, J. Am. Ceram. Soc. 96, 146 (2013).Google Scholar
  84. [84]
    D. Shen, J-H. Park, J. H. Noh, S-Y. Choe, S-H. Kim, H. C. Wikle III and D-J. Kim, Sensors and actuators A: physical 154, 103 (2009).Google Scholar
  85. [85]
    S. S. Won, J. Lee, V. Venugopal, D-J. Kim, J. Lee, I. W. Kim, A. I. Kingon and S-H. Kim, Appl. Phys. Lett. 108, 232908 (2016).ADSGoogle Scholar
  86. [86]
    L. Wang, W. Ren, P. Shi, X. Chen, X. Wu and X. Yao, Appl. Phys. Lett. 97, 072902 (2010).ADSGoogle Scholar
  87. [87]
    L. Wang, W. Ren, P. Shi and X. Wu, J. Appl. Phys. 115, 034103 (2014).ADSGoogle Scholar
  88. [88]
    Y. Sun, Y. Zhou, Q. Lu and S. Zhao, Physica Status Solidi RRL 12, 1700364 (2018).ADSGoogle Scholar
  89. [89]
    J. S. Kim, S. Y. Lee, C. W. Ahn, H. I. Hwang, H. J. Lee, S. H. Bae and I. W. Kim, Jpn. J. Appl. Phys. 49, 095805 (2010).ADSGoogle Scholar
  90. [90]
    T. P-C. Juan, S-M. Chen and J. Y-M. Lee, J. Appl. Phys. 95, 3120 (2004).ADSGoogle Scholar
  91. [91]
    F. Lai, J-F. Li, Z-X. Zhu and Y. Xu, J. Appl. Phys. 106, 064101 (2009).ADSGoogle Scholar
  92. [92]
    P. C. Goh, K. Yao and Z. Chen, Appl. Phys. Lett. 99, 092902 (2011).ADSGoogle Scholar
  93. [93]
    C-C. Lin, C-C. Chen, C-M. Weng, S-Y. Chu, C-S. Hong and C-C. Tsai, J. Appl. Phys. 117, 085307 (2015).ADSGoogle Scholar
  94. [94]
    S. Y. Lee, C. W. Ahn, J. S. Kim, A. Ullah, H. J. Lee, H-I. Hwang, J. S. Choi, B. H. Park and I. W. Kim, J. Alloys Compd. 509, L194 (2011).Google Scholar
  95. [95]
    S. Y. Lee, J. S. Kim, C. W. Ahn, A. Ullah, H. J. Lee and I. W. Kim, Curr. Appl. Phys. 11, S157 (2011).Google Scholar
  96. [96]
    C. W. Ahn, H. J. Seog, A. Ullah, S. Y. Lee, J. W. Kim, S. S. Kim, M. Park, K. No and I. W. Kim, J. Appl. Phys. 111, 024110 (2012).ADSGoogle Scholar
  97. [97]
    J. S. Kim, C. W. Ahn, A. Ullah, S. A. Chae and I. W. Kim, J. Korean Phys. Soc. 68, 1461 (2016).ADSGoogle Scholar
  98. [98]
    L. Wang, R. Zuo, L. Liu, H. Su, M. Shi, X. Chu, X. Wang and L. Li, Mater. Chem. Phys. 130, 165 (2011).Google Scholar
  99. [99]
    H. J. Lee, C. W. Ahn, S. S. Won, A. Tange, B. C. Park, H. J. Seog and I. W. Kim, J. Korean Phys. Soc. 66, 1401 (2015).ADSGoogle Scholar
  100. [100]
    T. Shiraishi, N. Kaneko, M. Kurosawa, H. Uchida, T. Hirayama and H. Funakubo, Jpn. J. Appl. Phys. 53, 05FE02 (2014).Google Scholar
  101. [101]
    T. Li, G. Wang, D. Remiens and X. Dong, Ceram. Int. 39, 1359 (2013).Google Scholar
  102. [102]
    Q. Yu, J-F. Li, W. Sun, Z. Zhou, Y. Xu, Z-K. Xie, F-P. Lai and Q-M. Wang, J. Appl. Phys. 113, 024101 (2013).ADSGoogle Scholar
  103. [103]
    T. Li, G. Wang, K. Li, N. Sama, D. Remiens and X. Dong, J. Am. Ceram. Soc. 96, 787 (2013).Google Scholar
  104. [104]
    L. S. Kang, B. Y. Kim, I. T. Seo, T. G. Seong, J. S. Kim, J. W. Sun, D. S. Paik, I. Hwang, B. H. Park and S. Nahm, J. Am. Ceram. Soc. 94, 1970 (2011).Google Scholar
  105. [105]
    L. Wang, W. Ren, K. Yao, P. C. Goh, P. Shi, X. Wu and X. Yao, J. Am. Ceram. Soc. 93, 3686 (2010).Google Scholar
  106. [106]
    L. Wang, W. Ren, K. Yao, P. Shi, X. Wu and X. Yao, Ceram. Int. 38, S291 (2012).Google Scholar
  107. [107]
    J. Pavlič, B. Malič and T. Rojac, J. Am. Ceram. Soc. 97, 1497 (2014).Google Scholar
  108. [108]
    M. Dolhen, A. Mahajan, R. Pinho, M. E. Costa, G. Trolliard and P. M. Vilarinho, RSC Advances 5, 4698 (2015).Google Scholar
  109. [109]
    D. Wang, D. Lin, K. Kwok, N. Chan, J. Dai, S. Li and H. Chan, Appl Phys. Lett. 98, 022902 (2011).ADSGoogle Scholar
  110. [110]
    M. Abazari, T. Choi, S. Cheong and A. Safari, J. Phys. D: Appl. Phys. 43, 025405 (2009).ADSGoogle Scholar
  111. [111]
    S. Yamazoe, Y. Miyoshi, T. Hattori, H. Adachi and T. Wada, Jpn. J. Appl. Phys. 49, 09MA06 (2010).Google Scholar
  112. [112]
    N. Kondo, W. Sakamoto, B-Y. Lee, T. Iijima, J. Kumagai, M. Moriya and T. Yogo, Jpn. J. Appl. Phys. 49, 09MA04 (2010).Google Scholar
  113. [113]
    T. Matsuda, W. Sakamoto, B-Y. Lee, T. Iijima, J. Kumagai, M. Moriya and T. Yogo, Jpn. J. Appl. Phys. 51, 09LA03 (2012).Google Scholar
  114. [114]
    E. Martínez-Aguilar, J. Gervacio-Arciniega, X. Vendrell, J. Siqueiros-Beltrones and O. Raymond-Herrera, Scientific Reports 7, 17721 (2017).ADSGoogle Scholar
  115. [115]
    X. Zhang, J. Liu, K. Zhu, J. Wang, Z. Li and J. Qiu, J. Mater. Sci.: Mater. Electron. 28, 487 (2017).Google Scholar
  116. [116]
    M. Abazari and A. Safari, J. Appl. Phys. 105, 094101 (2009).ADSGoogle Scholar

Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  • Hae Jin Seog
    • 1
  • Aman Ullah
    • 2
  • Chang Won Ahn
    • 3
  • Ill Won Kim
    • 3
  • Sun Young Lee
    • 4
  • Jungmin Park
    • 5
  • Hai Joon Lee
    • 6
  • Sung Sik Won
    • 7
  • Seung-Hyun Kim
    • 7
  1. 1.Department of Physics and Energy Harvest-Storage Research CenterUniversity of UlsanUlsanKorea
  2. 2.Department of PhysicsUniversity of Science and TechnologyBannuPakistan
  3. 3.Department of Physics and Energy Harvest-Storage Research CenterUniversity of UlsanUlsanKorea
  4. 4.Division of Analysis and ResearchKorea Basic Science InstituteBusanKorea
  5. 5.School of Materials Science and Engineering-Low Dimensional Carbon Materials CenterUlsan National Institute of Science and TechnologyUlsanKorea
  6. 6.Samsung Electro-mechanics Corporate R&D InstituteSuwonKorea
  7. 7.School of EngineeringBrown UniversityProvidenceUSA

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