Abstract
Polarization holographic recording of diffraction gratings and their subsequent erasure have been investigated on As2S3–Se multilayer nanostructures. The work investigates how preexposure to actinic laser radiation up to complete photoinduced changes in the optical properties affects the formation of diffraction gratings in the studied structure. It is shown that the preexposure of an As2S3–Se multilayer nanostructure (MNS) leads to photobleaching, and the maximum achievable diffraction efficiency (DE) of 35% does not change; however, the required exposure value is increased. It is also shown that exposure using one laser beam results in complete erasure of the diffraction grating recorded up to the maximum. Seven recording–erasure cycles show that the kinetics of the increase in diffraction efficiency and its maximum value do not change, which indicates that the As2S3–Se multilayer structure is capable of reversible holographic recording under orthogonal circular polarization. Study of the gratings recorded with an atomic-force microscope shows that the main factor determining the diffraction efficiency value is modulation of the relief, the depth of which is greater than 200 nm.
Similar content being viewed by others
References
Popescu, M., J. Optoelectron. Adv. Mater., 2005, vol. 7, pp. 2189–2210.
Andriesh, A.M., in Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics, Andriesh, A. and Bertolotti, M., Eds., NATO Science Partnership Subseries no. 3, Dordrecht: Springer-Verlag, 1997, vol. 36, pp. 17–30.
Kolomiets, B.T., Lyubin, V.M., and Shilo, V.P., Fiz. Khim. Stekla, 1978, vol. 4, no. 3, pp. 351–357.
Indutnyi, I.Z., Stronski, A.V., Kostioukevitch, S.A., Schepeljavi, P.E., et al., Opt. Eng., 1995, vol. 34, no. 4, pp. 1030–1039.
Saito, K., Utsugi, Y., and Yoshikawa, A., J. Appl. Phys., 1988, vol. 63, pp. 565–567.
Stronski, A.V., Microelectronic Interconnections and Assembly, Dordrecht: Springer-Verlag, 1998, pp. 263–293.
Pan, W.J., Furniss, D., Rowe, H., Miller, C.A., et al., J. Non-Cryst. Solids, 2007, vol. 353, pp. 1302–1306.
Mizushima, Y. and Yoshikava, A., Photoprocessing and lithographic applications, in Amorphous Semiconductor Technologies and Devices, Hamakava, Y., Ed., Tokyo: Ohmsha, 1982, pp. 277–295.
Zenkin, S.A., Mamedov, S.B., Mikhailov, M.D., Turkina, E.Yu., et al., Glass Phys. Chem., 1997, vol. 23, no. 5, pp. 393–399.
Zhdanov, V.G. and Malinovskii, V.K., Pis’ma Zh. Eksp. Teor. Fiz., 1977, vol. 3, no. 18, pp. 943–946.
Zhdanov, V.G., Kolomiets, B.T., Lyubin, V.M., and Malinovskii, V.K., Phys. Status Solidi A, 1979, vol. 52, pp. 621–626.
Tanaka, K., Science, 1997, vol. 277, pp. 1786–1787.
Kwak, C.H., Kim, J.T., and Lee, S.S., Opt. Lett., 1988, vol. 13, pp. 437–439.
Ozols, A. and Reinfelde, M., J. Opt. A: Pure Appl. Opt., 2004, vol. 6, pp. S134–S141.
Saliminia, A., Galstian, T.V., and Villeneuve, A., Phys. Rev. Lett., 2000, vol. 85, pp. 4112–4115.
Trunov, M.L., Lytvyn, P.M., Yannopoulos, S.N., Szabo, I.A., et al., Appl. Phys. Lett., 2011, vol. 99, art. ID 051906.
Trunov, M.L., Lytvyn, P.M., Nagy, P.M., and Dyachyns’ka, O.M., Appl. Phys. Lett., 2010, vol. 96, no. 11, art. ID 111908.
Gertners, U. and Teteris, J., Adv. Optoelectron., 2015, vol. 2015, art. ID 917029.
Kikineshi, A., J. Optoelectron. Adv. Mater., 2001, vol. 3, pp. 377–382.
Kikineshi, A., Palyok, V., Szabo, I.A., Shipljak, M., et al., J. Non-Cryst. Solids, 2003, vols. 326–327, pp. 484–488.
Achimova, E., Stronski, A., Abashkin, V., Meshalkin, A., et al., Opt. Mater., 2015, vol. 47, pp. 566–572.
Achimova, E., Surf. Eng. Appl. Electrochem., 2016, vol. 52, no. 5, pp. 456–468.
Holomb, R., Mitsa, V., Petrachenkov, O., Veres, M., et al., Phys. Status Solidi C, 2011, vol. 8, pp. 2705–2708.
Igo, T. and Toyshima, Y.A. J. Non-Cryst. Solids, 1973, vol. 11, pp. 304–308.
Feinleib, J., de Neufville, J., Moss, S.C., and Ovshinsky, S.R., Appl. Phys. Lett., 1971, vol. 18, pp. 254–257.
Crecmer, P., Moulin, A.M., Stephenson, R.J., Rayment, T., et al., Science, 1997, vol. 277, pp. 1799–1802.
Gurevich, S.B., Ilyashenko, N.N., Kolomiets, B.T., and Lyubin, V.M., Zh. Tekh. Fiz., 1973, vol. 43, no. 1, pp. 217–219.
Palanjyan, K., Study of photoinduced anisotropy in chalcogenide Ge–As–S thin films, PhD Dissertation, Quebec, 2015. http://www.theses.ulaval. ca/2015/31836/31836.pdf.
Elliott, S.R. and Tikhomirov, V.K., J. Non-Cryst. Solids, 1996, vol. 198, pp. 669–674.
Asatryan, K.E., Frederick, S., Galstian, T., and Vallee, R., Appl. Phys. Lett., 2004, vol. 84, pp. 1626–1628.
Lyubin, V.M. and Tikhomirov, V.K., J. Non-Cryst. Solids, 1991, vol. 135, pp. 37–48.
Kryshenik, V.M., Trunov, M.L., and Ivanitsky, V.P., J. Optoelectron. Adv. Mater., 2007, vol. 9, pp. 1949–1964.
Asatryan, K.E., Galstian, T., and Vallee, R., Phys. Rev. Lett., 2005, vol. 94, art. ID 087401.
Trunov, M.L., Lytvyn, P.M., and Dyachyns’ka, O.M., Appl. Phys. Lett., 2010, vol. 97, art. ID 031905.
Abaskin, V., Achimova, E., Meshalkin, A., Prisacar, A., et al., Surf. Eng. Appl. Electrochem., 2016, vol. 52, no. 4, pp. 380–386.
Stronski, A., Achimova, E., Paiuk, O., Meshalkin, A., et al., Nanoscale Res. Lett., 2016, vol. 11, no. 39, pp. 1–7.
Swanepoel, R., J. Phys. E: Sci. Instrum., 1983, vol. 16, pp. 1214–1222.
Tauc, J., Grigorovici, R., and Vancu, A., Phys. Status Solidi B, 1966, vol. 15, pp. 627–637.
Ganjoo, A. and Golovchak, R., J. Optoelectron. Adv. Mater., 2008, vol. 10, pp. 1328–1332.
Cai, L.Z. and Yang, X.L., Opt. Laser Technol., 2002, vol. 34, pp. 671–674.
Adarsh, K.V., Sangunni, K.S., Shripathi, T., Kokenyesi, S., et al., J. Appl. Phys., 2006, vol. 99, art. ID 094301.
Goodman, J.W., Introduction to Fourier Optics, New York: McGraw-Hill, 1996, pp. 81–83.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.Yu. Meshalkin, 2018, published in Elektronnaya Obrabotka Materialov, 2017, No. 6, pp. 97–104.
About this article
Cite this article
Meshalkin, A.Y. Reversible Polarization Recording in As2S3–Se Multilayer Nanostructures. Surf. Engin. Appl.Electrochem. 54, 407–414 (2018). https://doi.org/10.3103/S1068375518040129
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068375518040129