Abstract
The influence of different impurities on the kinetics of electronic processes in n-Ge<Sb> single crystals is investigated. A substantial decrease in the charge carrier mobility in the region of predominantly impurity scattering (at 77 K) in n-Ge<Sb + Si> crystals, as well as in germanium crystals doped with the rareearth elements, is detected, and this effect is explained.
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Original Russian Text © G.P. Gaidar, E.Yu. Gaivoronskaya, 2018, published in Elektronnaya Obrabotka Materialov, 2017, No. 2, pp. 70–74.
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Gaidar, G.P., Gaivoronskaya, E.Y. Hall Effect in Germanium Doped with Different Impurities. Surf. Engin. Appl.Electrochem. 54, 385–389 (2018). https://doi.org/10.3103/S1068375518040063
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DOI: https://doi.org/10.3103/S1068375518040063