Skip to main content
SpringerLink
Log in

Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy

  • Published:
Bulletin of the Lebedev Physics Institute Aims and scope Submit manuscript

Abstract

Single quantum wells in the system Si1_xGex/Si with x < 0.1 are grown by molecular-beam epitaxy in the mode of periodic Ge molecular flow interruption during the formation of the alloy layer. It allowed an increase in the operating current of the source electron gun, which provided a more stable molecular Ge flow. The grown heterostructures are studied by transmission scanning electron microscopy methods

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. K. Kheng, R. T. Cox, Y. Merle d’Aubigne, et al., Phys. Rev. Lett. 71, 1752 (1993).

    Article  ADS  Google Scholar 

  2. A. V. Gorbunov and V. B. Timofeev, Pisma Zh. Eksp. Teor. Fiz. 83, 178 (2006) [JETP Lett. 83, 146 (2006)].

    Google Scholar 

  3. T. P. Pearsall, J. Bevk, L. C. Feldman et al., Phys. Rev. 58, 729 (1987).

    Google Scholar 

  4. E. Kasper, H. Kibbel, and H. Jorke, Phys. Rev. B 38, 3599 (1988).

    Article  ADS  Google Scholar 

  5. T. P. Persall, J. Bevk, L. C. Feldman, et al., Phys. Rev. Lett. 58, 729 (1987).

    Article  ADS  Google Scholar 

  6. Yu. G. Sadofyev, V. P. Martovitsky, and M. A. Bazalevsky, Izv. Ross. Akad. Nauk. Ser. Fiz 78, 47 (2014) [Bull. Russ. Acad. Sci.: Phys. 78, 29 (2014)].

    Google Scholar 

  7. V. V. Roddatis, A. L. Vasiliev, and M. V. Kovalchuk, J. Phys.: Conf. Ser. 471, 012044 (2013).

    Google Scholar 

  8. B. Gallas, I. Berbezier, A. Ronda, and J. Derrien, Thin Solid Films 294, 22 (1997).

    Article  ADS  Google Scholar 

  9. Electron-Hole Droplets in Semiconductors, Ed. by C. D. Jeffries and L.V. Keldysh (North-Holland, Amsterdam, 1983).

    Google Scholar 

  10. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 34, 5621 (1986).

    Article  ADS  Google Scholar 

  11. L. Keldysh, Phys. Status Solidi A 164, 3 (1997).

    Article  ADS  Google Scholar 

  12. L. Yang, J. R. Watling, R. C. W. Wilkins, et al., Semicond. Sci. Technol. 19, 1174 (2004).

    Article  ADS  Google Scholar 

  13. J.-H. Park, M. Kurosawa, N. Kawabata, et al., Thin Solid Films 520, 3293 (2012).

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    I. P. Kazakov, A. V. Klekovkin, V. A. Tsvetkov & M. A. Akmaev

  2. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Nagornyi pr. 7, str. 5, Moscow, 117105, Russia

    A. V. Klekovkin

  3. Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova38, Moscow, 119991, Russia

    O. V. Uvarov

Authors
  1. I. P. Kazakov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. V. Klekovkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. A. Tsvetkov
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. A. Akmaev
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. O. V. Uvarov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. V. Klekovkin.

Additional information

Russian Text © I.P. Kazakov, A.V. Klekovkin, V.A. Tsvetkov, M.A. Akmaev, O.V. Uvarov, 2019, published in Kratkie Soobshcheniya po Fizike, 2019, Vol. 46, No. 1, pp. 40–46.

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Kazakov, I.P., Klekovkin, A.V., Tsvetkov, V.A. et al. Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy. Bull. Lebedev Phys. Inst. 46, 5–8 (2019). https://doi.org/10.3103/S1068335619010020

Download citation

  • Received:

  • Revised:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068335619010020

Keywords

Search

Navigation