Abstract
It is shown that the effective Lande splitting factor or g-factor of electrons localized on heterostructures such as small quantum dots is always formed as a difference of two values. The first of themrelates to thematerial of the dot itself and critically depends on its sizes and shape; the second one relates to the barriermaterial (surrounding matrix); therewith, the dependence on the latter does not disappear at any dot sizes. The known (k, p) Kane theory defining the renormalization of electron mass and g-factor in bulk semiconductors, is modified for small quantum dots with “incomplete” band structure. Specific calculations of the electron ground state energy and g-factor are performed for the covariant InAs/AlSb heterostructure not localizing holes and, hence, capable of forming pure one-electron states (prototypes of solid-state qubits).
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Original Russian Text © A.M. Mandel, V.B. Oshurko, S.G. Veselko, K.G. Solomakho, S.M. Pershin, A.A. Sharts, 2018, published in Kratkie Soobshcheniya po Fizike, 2018, Vol. 45, No. 9, pp. 39–45.
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Mandel, A.M., Oshurko, V.B., Veselko, S.G. et al. g-Factor Calculation in Small Quantum Dots. Bull. Lebedev Phys. Inst. 45, 282–286 (2018). https://doi.org/10.3103/S1068335618090063
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DOI: https://doi.org/10.3103/S1068335618090063