Skip to main content
SpringerLink
Log in

Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. II. Investigation of properties

  • Published:
Bulletin of the Lebedev Physics Institute Aims and scope Submit manuscript

Abstract

GaAs/Ge/GaAs heterostructures in which GaAs layer lattices are rotated at a right angle in the substrate plane are studied. High quality of heterostructures is confirmed by X-ray diffraction and photoluminescence methods.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. I. P. Kazakov, V. I. Tsekhosh, A. V. Klekovkin, and M. A. Bazalevsky, Kratkie Soobshcheniya po Fizike FIAN 44(7), 3 (2017) [Bulletin of the Lebedev Physics Institute 44, 137 (2017)].

    Google Scholar 

  2. V. S. Bagaev, V. S. Krivobok, E. E. Onishchenko, et al., Zh. Eksp. Teor. Fiz. 140, 929 (2011) [J. Exp. Theor. Phys. 113, 808 (2011)].

    Google Scholar 

  3. Х. Yu, PhD Thesis (Stanford Univ., 2006).

    Google Scholar 

  4. M. K. Hudait, Y. Zhu, N. Jain, and J. L. Hunter, J. Vac. Sci. Tech. B 31, 011206-1 (2013).

  5. E. Third, F. Weinberg, M. Thewalt, and L. Young, Appl. Phys. Lett. 58, 714 (1991).

    Article  ADS  Google Scholar 

  6. A. G. Milnes, Deep Impurities in Semiconductors (Wiley, New York, 1973).

    Google Scholar 

  7. M. Ilegems, R. Dingle, and L.W. Rupp, Jpn. J. Appl. Phys. 46, 3059 (1975).

    Article  ADS  Google Scholar 

  8. C. E. Third, F. Weinberg, M. Thewalt, and L. Young. Appl. Phys. Lett. 58, 714 (1991).

    Article  ADS  Google Scholar 

  9. A. A. Lebedev and Yu. V. Rud’, Pisma Zh. Tekh. Fiz. 22, 12 (1996).

    Google Scholar 

  10. D. N. Goryachev and O. M. Sreseli, Fiz. Tekh. Poluprovodn. 31, 1383 (1997) [Semiconductors 31, 1192 (1997)].

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    I. P. Kazakov, A. A. Pruchkina, M. A. Bazalevsky, A. V. Klekovkin & V. I. Tsekhosh

Authors
  1. I. P. Kazakov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. A. Pruchkina
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. A. Bazalevsky
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. A. V. Klekovkin
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. I. Tsekhosh
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to I. P. Kazakov.

Additional information

Original Russian Text © I.P. Kazakov, A.A. Pruchkina, M.A. Bazalevsky, A.V. Klekovkin, V.I. Tsekhosh, 2017, published in Kratkie Soobshcheniya po Fizike, 2017, Vol. 44, No. 8, pp. 10–17.

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Kazakov, I.P., Pruchkina, A.A., Bazalevsky, M.A. et al. Orientation-patterned templates GaAs/Ge/GaAs for nonlinear optical devices. II. Investigation of properties. Bull. Lebedev Phys. Inst. 44, 223–227 (2017). https://doi.org/10.3103/S1068335617080024

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.3103/S1068335617080024

Keywords

Search

Navigation