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Bulletin of the Lebedev Physics Institute

, Volume 44, Issue 1, pp 13–16 | Cite as

Laser emission efficiency of semiconductor target of gas diode in the picosecond range

  • A. S. NasibovEmail author
  • K. V. Berezhnoy
  • M. B. Bochkarev
  • A. G. Sadykova
  • S. A. Shunailov
  • M. I. YalandinEmail author
Article
  • 18 Downloads

Abstract

Laser radiation excited in a cadmiumsulfide semiconductor target (ST) (λ = 522 nm) by a high-intensity subnanosecond electron beam (EB) with an energy of 70–150 keV has a maximum intensity of 3 · 107W/cm2 at an efficiency of~10%. Lasing arose at the EB exciting pulse front. The laser radiation pulse shape reproduced the EB pulse shape.

Keywords

gas diode semiconductors explosive electron emission lasing 

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Copyright information

© Allerton Press, Inc. 2017

Authors and Affiliations

  • A. S. Nasibov
    • 1
    Email author
  • K. V. Berezhnoy
    • 1
  • M. B. Bochkarev
    • 2
  • A. G. Sadykova
    • 2
  • S. A. Shunailov
    • 2
  • M. I. Yalandin
    • 2
    Email author
  1. 1.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  2. 2.Institute of Electrophysics, Ural BranchRussian Academy of SciencesEkaterinburgRussia

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