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Photoluminescence kinetics of a metastable SiGe/Si layer with ring microstructures on the surface

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Abstract

The effect of the lateral inhomogeneity resulting from the diffusive instability development during epitaxial growth on the kinetics of low-temperature photoluminescence of the Si0.9Ge0.1–Si heterostructures is shown.

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. N. Minnullin & S. V. Shevtsov

  2. Moscow Institute of Physics and Technology, Institutskii per. 9, Dolgoprudnyi, Moscow Oblast, 141700, Russia

    S. V. Shevtsov

Authors
  1. A. N. Minnullin
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  2. S. V. Shevtsov
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Correspondence to S. V. Shevtsov.

Additional information

Original Russian Text © A.N. Minnullin, S.V. Shevtsov, 2015, published in Kratkie Soobshcheniya po Fizike, 2015, Vol. 42, No. 10, pp. 33–38.

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Minnullin, A.N., Shevtsov, S.V. Photoluminescence kinetics of a metastable SiGe/Si layer with ring microstructures on the surface. Bull. Lebedev Phys. Inst. 42, 302–304 (2015). https://doi.org/10.3103/S1068335615100061

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  • DOI: https://doi.org/10.3103/S1068335615100061

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