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Bulletin of the Lebedev Physics Institute

, Volume 42, Issue 5, pp 121–126 | Cite as

Dynamic characteristics of “low-temperature” gallium arsenide for terahertz-range generators and detectors

  • A. A. Gorbatsevich
  • V. I. Egorkin
  • I. P. Kazakov
  • O. A. Klimenko
  • A. Yu. Klokov
  • Yu. A. Mityagin
  • V. N. MurzinEmail author
  • S. A. Savinov
  • V. A. Tsvetkov
Article

Abstract

The lifetime of free photoexcited carriers in epitaxial films of “low-temperature” gallium arsenide (LT-GaAs) is determined by the pump-probe optical reflection method. The dark resistivity of LT-GaAs layers is estimated. Emission spectra of LT-GaAs photoconductive antennas are measured in the terahertz frequency region by the Fourier transform spectroscopy.

Keywords

low-temperature gallium arsenide optical pump-probe measurements photoexcited carrier lifetime photoconductive antennas terahertz radiation 

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Copyright information

© Allerton Press, Inc. 2015

Authors and Affiliations

  • A. A. Gorbatsevich
    • 1
    • 2
  • V. I. Egorkin
    • 2
  • I. P. Kazakov
    • 1
  • O. A. Klimenko
    • 1
  • A. Yu. Klokov
    • 1
  • Yu. A. Mityagin
    • 1
  • V. N. Murzin
    • 1
    Email author
  • S. A. Savinov
    • 1
  • V. A. Tsvetkov
    • 1
  1. 1.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  2. 2.National Research University of Electronic Technology (MIET)Zelenograd, Moscow oblastRussia

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