Abstract
The method of epitaxial growth of localized photoluminescence sources in the form of the ordered microcolumn diamond structures with silicon-vacancy (SiV) color centers is implemented. The process is based on diamond deposition in microwave plasma in CH4-H2 mixtures in microwells in a silicon mask on a diamond single crystal substrate, where the Si mask itself is a silicon doping source. Strong photoluminescence of SiV centers at a wavelength of 738 nm is detected; the spatial distribution of luminescence completely coincides with the synthesized structure arrangement.
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Original Russian Text © D.N. Sovyk, V.A. Shershulin, V.G. Ralchenko, A.A. Khomich, M.S. Komlenok, V.V. Vorobyov, I.I. Vlasov, A.V. Akimov, V.G. Pereverzev, V.I. Konov, 2015, published in Kratkie Soobshcheniya po Fizike, 2015, Vol. 42, No. 2, pp. 51–56.
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Sovyk, D.N., Shershulin, V.A., Ralchenko, V.G. et al. Synthesis and doping of microcolumn diamond photoemitters with silicon-vacancy color centers. Bull. Lebedev Phys. Inst. 42, 63–66 (2015). https://doi.org/10.3103/S1068335615020062
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DOI: https://doi.org/10.3103/S1068335615020062