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Features of diffusion processes during drop epitaxy of quantum rings

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Abstract

The drop epitaxy process in the GaAs/AlGaAs system is experimentally and theoretically studied. Epitaxial structure samples with arrays of single and double quantum rings are grown under various growth conditions. Diffusion processes of Ga and As adatoms are considered, steady-state diffusion equations are analytically solved, and the formation mechanisms of single and double quantum rings are revealed. The results obtained make it possible to model the quantum ring profile depending on growth conditions and, hence, to control the nanostructure profile during drop epitaxy.

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, Moscow, 115409, Russia

    Yu. D. Sibirmovskii, I. S. Vasil’evskii, A. N. Vinichenko, I. S. Eremin, N. I. Kargin, O. S. Kolentsova & M. N. Strikhanov

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  1. Yu. D. Sibirmovskii
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  2. I. S. Vasil’evskii
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  3. A. N. Vinichenko
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  4. I. S. Eremin
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  5. N. I. Kargin
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  6. O. S. Kolentsova
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  7. M. N. Strikhanov
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Corresponding author

Correspondence to Yu. D. Sibirmovskii.

Additional information

Original Russian Text © Yu.D. Sibirmovskii, I.S. Vasil’evskii, A.N. Vinichenko, I.S. Eremin, N.I. Kargin, O.S. Kolentsova, M.N. Strikhanov, 2014, published in Kratkie Soobshcheniya po Fizike, 2014, Vol. 41, No. 9, pp. 3–8.

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Sibirmovskii, Y.D., Vasil’evskii, I.S., Vinichenko, A.N. et al. Features of diffusion processes during drop epitaxy of quantum rings. Bull. Lebedev Phys. Inst. 41, 243–246 (2014). https://doi.org/10.3103/S1068335614090012

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  • DOI: https://doi.org/10.3103/S1068335614090012

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