Abstract
The kinetics of water vapor adsorption on the porous silicon surface is studied by the gas relaxometry method. The process multistepping which is reflected in sequential changes in H2O molecule diffusivities into the porous matrix, is found. Phenomenological models describing the experiment are considered.
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Original Russian Text © D.M. Kurmasheva, V.D. Travkin, P.O. Kapralov, V.G. Artemova, V.I. Tikhonov, A.A. Volkov, E.S. Zhukov, D.G. Artemov, N.P. Chirskaya, 2014, published in Kratkie Soobshcheniya po Fizike, 2014, Vol. 41, No. 3, pp. 20–27.
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Kurmasheva, D.M., Travkin, V.D., Kapralov, P.O. et al. Kinetics of water molecule adsorption on the porous silicon surface. Bull. Lebedev Phys. Inst. 41, 63–67 (2014). https://doi.org/10.3103/S1068335614030038
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DOI: https://doi.org/10.3103/S1068335614030038