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Increase in individual absorption bands of MgF2 under electron irradiation

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Abstract

Decomposition of the induced absorption spectra of a MgF2 crystal into individual bands made it possible to construct the dependences of their intensity, and hence, the intrinsic defect concentration, on the electron beam fluence (energy density). The features of these dependences and their possible consequences are analyzed.

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References

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Authors and Affiliations

  1. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, Moscow, 119991, Russia

    A. P. Sergeev & P. B. Sergeev

Authors
  1. A. P. Sergeev
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  2. P. B. Sergeev
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Correspondence to A. P. Sergeev.

Additional information

Original Russian Text © A.P. Sergeev, P.B. Sergeev, 2011, published in Kratkie Soobshcheniya po Fizike, 2011, Vol. 38, No. 10, pp. 3–8.

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Sergeev, A.P., Sergeev, P.B. Increase in individual absorption bands of MgF2 under electron irradiation. Bull. Lebedev Phys. Inst. 38, 283–286 (2011). https://doi.org/10.3103/S1068335611100010

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  • DOI: https://doi.org/10.3103/S1068335611100010

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