Abstract
The experimental results on the study of radiation of Cd x Zn1−x S semiconductor targets (STs) of the gas diode (GD) for the pressure variation from 10−1 Torr to the atmospheric pressure are presented. Pulses 0.5–1 ns long with an amplitude to 200 kV were applied to the GD cathode. Laser radiation (509 nm) was generated in the ST under a beam of accelerated runaway electrons to a pressure of 2.5 Torr. At atmospheric pressure, generation in the ST was observed in discharge channels when the streamer moved from one ST surface to another. In this case, as the electric fields strength increased, radiation sequentially arose at three spectral lines, 509, 480, and 469 nm. Possible causes of the observed phenomena are considered.
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Original Russian Text © A.S. Nasibov, G.L. Danielyan, V.G. Bagramov, K.V. Berezhnoi, P.V. Shapkin, 2011, published in Kratkie Soobshcheniya po Fizike, 2011, Vol. 38, No. 4, pp. 17–22.
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Nasibov, A.S., Danielyan, G.L., Bagramov, V.G. et al. Laser radiation of Cd x Zn1−x S semiconductor targets of the gas diode. Bull. Lebedev Phys. Inst. 38, 101–104 (2011). https://doi.org/10.3103/S1068335611040038
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DOI: https://doi.org/10.3103/S1068335611040038