Abstract
To provide basic operations of semiconductor and radiation materials technologies, a multipurpose implanter with intense ion beams was developed at the Institute of Nuclear Physics. The generated beamparameters are as follows: ions are H+, O+; C+; the ion energy is up to 200 keV; the beam current is up to 2 mA; and the implantation mode is continuous. The size of the target to be processed can reach 76 × 76 mm2. During the implanter operation, the target chamber vacuum reaches 10−4 Pa. The entire process of target irradiation is fully automated.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. A. Tiunov and B. M. Fomel, Preprint Budker INP 83-150 (Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 1983).
M. A. Tiunov, B. M. Fomel, and V. P. Yakovlev, in Proceedings of the XIII International Conference on High Energy Accelerators, Novosibirsk, 1987 (IYaF, Novosibirsk, 1987), Vol. 1, p. 353.
M. A. Tiunov, B. M. Fomel, and V. P. Yakovlev, Preprint Budker INP 96-11 (Budker Institute of Nuclear Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk, 1996).
V. T. Astrelin and V. Ya. Ivanov, Avtometriya 3, 92 (1980).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © I.A. Ivanov, V.T. Astrelin, A.V. Burdakov, R.V. Voskoboynikov, A.I. Gorbovskii, A.A. Ivanov, V.A. Kapitonov, S.G. Konstantinov, K.N. Kuklin, S.V. Polosatkin, M.A. Tiunov, 2009, published in Kratkie Soobshcheniya po Fizike, 2009, Vol. 36, No. 11, pp. 15–17.
About this article
Cite this article
Ivanova, I.A., Astrelin, V.T., Burdakov, A.V. et al. Multipurpose implanter for high technology development. Bull. Lebedev Phys. Inst. 36, 325–326 (2009). https://doi.org/10.3103/S1068335609110037
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068335609110037