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Bulletin of the Lebedev Physics Institute

, Volume 36, Issue 1, pp 21–28 | Cite as

On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field

  • O. A. Klimenko
  • N. V. D’yakonova
  • V. Knap
  • Yu. A. Mityagin
  • V. N. Murzin
  • S. A. Savinov
  • V. S. Syzranov
  • V. A. Chuenkov
Article
  • 23 Downloads

Abstract

The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. The high-frequency response in structures with symmetric and asymmetric barriers was analyzed by numerical simulation methods. The effect of the Fermi distribution of carriers in the near-contact region was studied. It was shown that asymmetric structures with decreased impurity concentrations (1017 cm−3) in the emitter region are optimum from the viewpoint of experimental observation of the quantum amplification mode.

Keywords

LEBEDEV Physic Institute Emitter Region Barrier Width Fermi Distribution Resonant Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Allerton Press, Inc. 2009

Authors and Affiliations

  • O. A. Klimenko
  • N. V. D’yakonova
    • 1
  • V. Knap
    • 1
  • Yu. A. Mityagin
  • V. N. Murzin
  • S. A. Savinov
  • V. S. Syzranov
  • V. A. Chuenkov
  1. 1.GES Universite Montpellier II-CNRSMontpellierFrance

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