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On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field

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Abstract

The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. The high-frequency response in structures with symmetric and asymmetric barriers was analyzed by numerical simulation methods. The effect of the Fermi distribution of carriers in the near-contact region was studied. It was shown that asymmetric structures with decreased impurity concentrations (1017 cm−3) in the emitter region are optimum from the viewpoint of experimental observation of the quantum amplification mode.

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References

  1. E. R. Brown, T. C. L. G. Sollner, C. D. Parker, et al., Appl. Phys. Lett. 55, 1777 (1989).

    Article  ADS  Google Scholar 

  2. E. R. Brown, J. R. Soderstrom, C. D. Parker, et al., Appl. Phys. Lett. 58, 2291 (1991).

    Article  ADS  Google Scholar 

  3. V. F. Elesin, Zh. Eksp. Teor. Fiz. 116, 704 (1999) [JETP 89, 377 (1999)].

    Google Scholar 

  4. V. F. Elesin, Zh. Eksp. Teor. Fiz. 121, 925 (2002) [JETP 94, 794 (2002)].

    Google Scholar 

  5. V. F. Elesin, Zh. Eksp. Teor. Fiz. 124, 379 (2003) [JETP 97, 343 (2003)].

    Google Scholar 

  6. O. A. Klimenko, N. V. D’yakonova, V. Knap, et al., Kratkie Soobshcheniya po Fizike FIAN 36(1), 24 (2009) [Bulletin of the Lebedev Physics Institute 36, 14 (2009)].

    Google Scholar 

  7. V. A. Chuenkov, Kratkie Soobshcheniya po Fizike FIAN 35(10), 21 (2008) [Bulletin of the Lebedev Physics Institute 35, 303 (2008)].

    Google Scholar 

  8. C. B. Duke, Tunneling in Solids (Academic, New York, 1969), Chap. 5.

    Google Scholar 

  9. V. J. Goldman, D. C. Tsui, and J. E. Cunningham, Phys. Rev. Lett. 58, 1256 (1987).

    Article  ADS  Google Scholar 

  10. C. Weisbuch and B. Vinter, Quantum Semiconductor Structures (Academic Press, San Diego, 1991).

    Google Scholar 

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Original Russian Text © O.A. Klimenko, N.V. D’yakonova, V. Knap, Yu.A. Mityagin, V.N. Murzin, S.A. Savinov, V.S. Syzranov, V.A. Chuenkov, 2009, published in Kratkie Soobshcheniya po Fizike, 2009, Vol. 36, No. 1, pp. 36–48.

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Klimenko, O.A., D’yakonova, N.V., Knap, V. et al. On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field. Bull. Lebedev Phys. Inst. 36, 21–28 (2009). https://doi.org/10.3103/S1068335609010047

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