Abstract
The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. The high-frequency response in structures with symmetric and asymmetric barriers was analyzed by numerical simulation methods. The effect of the Fermi distribution of carriers in the near-contact region was studied. It was shown that asymmetric structures with decreased impurity concentrations (1017 cm−3) in the emitter region are optimum from the viewpoint of experimental observation of the quantum amplification mode.
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Original Russian Text © O.A. Klimenko, N.V. D’yakonova, V. Knap, Yu.A. Mityagin, V.N. Murzin, S.A. Savinov, V.S. Syzranov, V.A. Chuenkov, 2009, published in Kratkie Soobshcheniya po Fizike, 2009, Vol. 36, No. 1, pp. 36–48.
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Klimenko, O.A., D’yakonova, N.V., Knap, V. et al. On the effect of the electron distribution in the near-contact region and asymmetry of the resonant-tunneling diode structure on the high-frequency response and the possibility of detecting the quantum amplification mode in an external high-frequency electric field. Bull. Lebedev Phys. Inst. 36, 21–28 (2009). https://doi.org/10.3103/S1068335609010047
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DOI: https://doi.org/10.3103/S1068335609010047