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Bulletin of the Lebedev Physics Institute

, Volume 36, Issue 1, pp 14–20 | Cite as

High-frequency response and the possibility of detecting the quantum amplification mode in resonant-tunneling diode structures

  • O. A. Klimenko
  • N. V. D’yakonova
  • V. Knap
  • Yu. A. Mityagin
  • V. N. Murzin
  • S. A. Savinov
  • V. S. Syzranov
  • V. A. Chuenkov
Article
  • 40 Downloads

Abstract

The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. Based on the constructed analytical model of the steady-state current and high-frequency response in symmetric RTD structures with finite barrier widths, high-frequency properties of RTDs in an external ac electric field were analyzed by numerical simulation methods. It was shown that the quantum amplification mode can appear not only in the high-frequency region of the terahertz range, but also at relatively low frequencies due to deformation of frequency dependences in a dc electric field.

Keywords

LEBEDEV Physic Institute Electron Beam Incident Terahertz Range Resonant Level Terahertz Frequency Range 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Allerton Press, Inc. 2009

Authors and Affiliations

  • O. A. Klimenko
  • N. V. D’yakonova
    • 1
  • V. Knap
    • 1
  • Yu. A. Mityagin
  • V. N. Murzin
  • S. A. Savinov
  • V. S. Syzranov
  • V. A. Chuenkov
  1. 1.GES Universite Montpellier II-CNRSMontpellierFrance

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