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Planar graphene-narrow-gap semiconductor-graphene heterostructure

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Abstract

A planar heterostructure composed of two graphene films between which a narrow-gap semiconductor ribbon is inserted was studied. It was shown that the Klein paradox is absent when conical points of the graphene Brillouin zone are in the band gap of a narrow-gap semiconductor. There is an energy range dependent on the angle of incidence, in which an above-barrier decaying solution can exist. Thereby, such a heterostructure is a filter transmitting particles in a certain range of angles of incidence on the potential barrier. The applicability of such a heterostructure as a gate is discussed.

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Authors
  1. P. V. Ratnikov
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  2. A. P. Silin
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Original Russian Text © P.V. Ratnikov, A.P. Silin, 2008, published in Kratkie Soobshcheniya po Fizike, 2008, Vol. 35, No. 11, pp. 10–20.

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Ratnikov, P.V., Silin, A.P. Planar graphene-narrow-gap semiconductor-graphene heterostructure. Bull. Lebedev Phys. Inst. 35, 328–335 (2008). https://doi.org/10.3103/S106833560811002X

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  • DOI: https://doi.org/10.3103/S106833560811002X

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