On the theory of the resonant interaction of electrons with a high-frequency electric field in one-dimensional two-barrier nanostructures with symmetric barriers of finite height and width

Abstract

The theory of the interaction of electrons with a high-frequency electric field in one-dimensional two-barrier nanostructures with symmetric barriers of finite height and widths was developed. An exact solution to the Schrödinger equation was found for electrons in this nanostructure in the absence of high-frequency electric field. An analytical expression for the direct current I ₀ induced in this structure by an incident electron flux with energy ε differing slightly from the resonant level energy ε _r (|ε − ε _r | << ε _r ) was derived. In the small-signal approximation, the active (field-phased) component I _c of the alternating electric current was calculated. At ε > ε _r , the current I _c is negative in the entire frequency range, which suggests the possibility of ac electric field amplification and generation in the two-barrier resonant-tunneling structure with the barriers of finite height and width. Within the applicability of the theory (ℏω << ε _r ), the frequency at which amplification and generation of the ac electric field are possible reaches ω ≳ 10¹³ s ⁻¹; the power transferred by electrons to the field is ∼1 W/cm².