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Theoretical analysis of defect formation in GaN:Mg crystals

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Abstract

The method of quasi-chemical reactions was used to construct the diagrams of point-defect equilibrium in GaN and GaN:Mg at 1400 K. According to these diagrams, it is impossible to obtain GaN with hole conductivity in equilibrium conditions. The nitrogen vacancies are shown to be the main acceptor-compensating centers in GaN.

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Authors and Affiliations

  1. Berdyansk State Pedagogical University, 4 Shmidt st., Berdyansk, 71118, Ukraine

    I. V. Rogozin

Authors
  1. I. V. Rogozin
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  2. A. N. Georgobiani
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Original Russian Text © I.V. Rogozin, A.N. Georgobiani, 2007, published in Kratkie Soobshcheniya po Fizike, 2007, Vol. 34, No. 2, pp. 3–13.

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Rogozin, I.V., Georgobiani, A.N. Theoretical analysis of defect formation in GaN:Mg crystals. Bull. Lebedev Phys. Inst. 34, 35–41 (2007). https://doi.org/10.3103/S1068335607020017

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  • DOI: https://doi.org/10.3103/S1068335607020017

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