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Research on Electron Emission from Dielectric Materials by a Monte Carlo Method

  • Condensed Matter Physics
  • Published:
Moscow University Physics Bulletin Aims and scope

Abstract

The charge accumulation in an insulating material under an electron beam bombardment exerts a significant influence to scanning electron microscopic imaging. This work investigates the charging formation process by a self-consistent Monte Carlo simulation of charge production and transportation based on a charge dynamics model. The charging effect in a semi-infinite SiO2 bulk and SiO2 trapezoidal lines on a SiO2 or Si substrate has been studied. We used two methods to calculate the spatial distributions of electric potential and electric field for two different systems respectively: the image charge method was used to deal with a semi-infinite bulk, and, random walk method to solve the Poisson equation for a complex geometric structure. The dynamic charging behavior depending on irradiation time has been investigated for SiO2. The simulated CD-SEM images of SiO2 trapezoidal lines with charging effect included were compared well with experimental results, showing the contrast change of SEM image along with scanning frames due to charging.

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Authors and Affiliations

  1. A School of Electronic Information Engineering, Yangtze Normal University, Chongqing, 408003, China

    P. Zhang

  2. Hefei National Laboratory for Physical Sciences at Microscale and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, China

    P. Zhang

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  1. P. Zhang
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Correspondence to P. Zhang.

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Zhang, P. Research on Electron Emission from Dielectric Materials by a Monte Carlo Method. Moscow Univ. Phys. 72, 574–581 (2017). https://doi.org/10.3103/S0027134917060212

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  • DOI: https://doi.org/10.3103/S0027134917060212

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