Abstract
The surface layers of single-crystal silicon Si(001) substrates subjected to plasma-immersion implantation with 2- and 5-keV helium ions to a dose of 5 × 1017 cm–2 were probed via grazing incidence small-angle X-ray scattering and transmission electron microscopy. A surface layer formed by helium ions was found to possess a multilayer structure, wherein the upper layer is amorphous silicon, being on top of a sublayer with helium bubbles and a sublayer with a disturbed crystal structure. The in-depth electron density distribution, as well as the concentration and pore-size distribution, were established. The average pore sizes of bubbles at the above implantation energies are 4 nm and 8 nm, respectively.
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Original Russian Text © A.A. Lomov, Yu.M. Chesnokov, A.P. Oreshko, 2017, published in Vestnik Moskovskogo Universiteta, Seriya 3: Fizika, Astronomiya, 2017, No. 6, pp. 69–74.
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Lomov, A.A., Chesnokov, Y.M. & Oreshko, A.P. The Formation of Helium Bubbles in Silicon Surface Layers via Plasma Immersion Ion Implantation. Moscow Univ. Phys. 72, 563–568 (2017). https://doi.org/10.3103/S0027134917060108
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DOI: https://doi.org/10.3103/S0027134917060108