Ellipsometric Method of Substrate Temperature Measurement in Low-Temperature Processes of Epitaxy of InSb Layers
- 4 Downloads
The present study is aimed at solving the problem of in situ thermometry of lowtemperature processes of molecular beam epitaxy of indium antimonide. A spectral ellipsometric method for measuring the temperature of InSb epitaxial layers is proposed. The method is based on the temperature dependence of the energy positions of the critical points. The spectra of ellipsometric parameters of the material in the temperature range from 25 to 270 °C are measured. The analysis of these spectra shows that the most temperature-sensitive parameters are the spectral positions of the peaks of the ellipsometric parameter, which are manifested near the critical points E1 and E1 + Δ1. It is found that the dependences of the peak positions on temperature in the above-mentioned temperature range are linear functions with the slope factors of 0.21 and 0.10 nm/°C, respectively. These factors determine the sensitivity of the method and ensure the temperature measurement accuracy within 2–3 °C.
Keywordsindium antimonide ellipsometry surface temperature in situ thermometry critical points
Unable to display preview. Download preview PDF.
- 3.I. D. Burlakov, K. O. Boltar’, A. E. Mirofyanchenko, et al., “Investigation of InSb Structures Grown by the Method of Molecular Beam Epitaxy,” Usp. Prikl. Fiz. 3 (6), 559–565 (2015).Google Scholar
- 4.A. K. Bakarov, A. K. Gutakovskii, K. S. Zhuravlev, et al., “Matrix Photodetector Devices Based on InSb Layers Grown by the Method of Molecular Beam Epitaxy,” Zh. Tekh. Fiz. 87 (6), 900–904 (2017).Google Scholar
- 5.Temperature Measurements: Reference Book, Ed. by O. A. Gerashchenko, A. N. Gordov, A. K. Eremina, et al. (Naukova Dumka, Kiev, 1989) [in Russian].Google Scholar
- 7.Radiometric Temperature Measurements. II. Applications, Ed. by Zh. Zhang, B. Tsai, and G. Machin (Elsevier, Amsterdam, 2010).Google Scholar
- 8.I. A. Azarov, V. A. Shvets, S. A. Dulin, et al., “Polarization Pyrometry of Layered Semiconductor Structures under Conditions of Low-Temperature Technological Processes,” Avtometriya 53 (6), 111–120 (2017) [Optoelectron., Instrum. Data Process. 53 (6), 630–638 (2017)].Google Scholar
- 11.E. V. Spesivtsev, S. V. Rykhlitskii, and V. A. Shvets, “Development of Methods and Instruments for Optical Ellipsometry at the Institute of Semiconductor Physics of the Siberian Branch of the Russian Academy of Sciences,” Avtometriya 47 (5), 5–12 (2011) [Optoelectron., Instrum. Data Process. 47 (5), 419–425 (2017)].Google Scholar
- 12.G. Yu. Sidorov, V. A. Shvets, Yu. G. Sidorov, and V. S. Varavin, “Dynamics of Growth of the Native Oxide of CdxHg1–xTe,” Avtometriya 53 (6), 97–105 (2017) [Optoelectron., Instrum. Data Process. 53 (6), 617–624 (2017)].Google Scholar
- 13.E. V. Spesivtsev, S. V. Rykhlitsky, V. A. Shvets, et al., “Time-Resolved Microellipsometry for Rapid Thermal Processes Monitoring,” Thin Sol. Films 455–456, 700–704 (2004).Google Scholar
- 14.A. S. Mardezhov, N. N. Mikhailov, and V. A. Shvets, “Ellipsometric Monitoring of Pre-Epitaxial Preparation of GaAs Substrates and Growing of Epitaxial CdTe Films, Poverkhnost’, No. 12, 92–96 (1990).Google Scholar
- 15.V. A. Shvets, I. A. Azarov, E. V. Spesivtsev, et al., “Methodical and Instrumental Problems of High-Accuracy Ellipsometric in Situ Diagnostics of the Composition of Mercury–Cadmium–Tellurium Layers in the Molecular Beam Epitaxy Technology,” PTE, No. 6, 87–94 (2016).Google Scholar