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Hall Effect in Germanium Doped with Different Impurities

  • G. P. Gaidar
  • E. Yu. Gaivoronskaya
Article

Abstract

The influence of different impurities on the kinetics of electronic processes in n-Ge<Sb> single crystals is investigated. A substantial decrease in the charge carrier mobility in the region of predominantly impurity scattering (at 77 K) in n-Ge<Sb + Si> crystals, as well as in germanium crystals doped with the rareearth elements, is detected, and this effect is explained.

Keywords

germanium impurities Hall effect Hall coefficient charge carrier mobility 

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Copyright information

© Allerton Press, Inc. 2018

Authors and Affiliations

  1. 1.Institute for Nuclear ResearchNational Academy of Sciences of UkraineKievUkraine
  2. 2.Lashkarev Institute of Semiconductor Physics (ISP)National Academy of Sciences of UkraineKievUkraine

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