Thermoelectric Properties and Surface States in the Layers of Bi2Te3 Topological Insulators

  • A. A. NikolaevaEmail author
  • L. A. Konopko
  • K. Rogatskii
  • P. P. Bodyul
  • I. Gergishan


The thermoelectric properties and Shubnikov–de Haas (SdH) oscillations of monocrystalline layers of a topological insulator (ТI) of n-type bismuth telluride were investigated. The monocrystalline Bi2Te3 layers were fabricated by the mechanical exfoliations of layers from a monocrystalline ingot of the appropriate composition. The cyclotron effective masses, the Dingle temperature, and the quantum mobilities of charge carriers were calculated from the experimental data by SdH oscillations both in longitudinal (HI) and in perpendicular (HI) magnetic fields at temperatures in the range of 2.1–4.2 K. It was found that the phase shift of the Landau levels index is 0.5 both for the parallel and for the perpendicular magnetic fields associated with the Berry phase of surface states. The power factor in the temperature range of 2–300 K was calculated from the temperature dependences of resistance and thermal e.m.f. It was stated that the power factor α2σ has a maximum value in the temperature range of 100–250 K, which corresponds to the maximum values for perfect monocrystals described in the literature. Taking into account that the heat conductivity in the thin layers is essentially lower than in the bulk samples, it is reasonable to expect a considerable increase in the thermoelectric efficiency over a wide temperature range, which is of great importance for the development of new highly effective thermoelectric materials based on thinner Bi2Te3 ТI layers for practical applications in thermogenerators and coolers.


topological insulators bismuth telluride single-crystal layers SdH oscillations thermoelectricity 


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Copyright information

© Allerton Press, Inc. 2018

Authors and Affiliations

  • A. A. Nikolaeva
    • 1
    • 2
    Email author
  • L. A. Konopko
    • 1
    • 2
  • K. Rogatskii
    • 2
  • P. P. Bodyul
    • 3
  • I. Gergishan
    • 1
  1. 1.Ghitu Institute of Electronic Engineering and NanotechnologiesAcademy of Sciences of MoldovaChisinauRepublic of Moldova
  2. 2.Institute of Low Temperature and Structural ResearchPolish Academy of SciencesWrocławPoland
  3. 3.Technical University of MoldovaChisinauRepublic of Moldova

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