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Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology

  • R. K. HovsepyanEmail author
  • N. R. Aghamalyan
  • Y. A. Kafadaryan
  • A. A. Arakelyan
  • H. G. Mnatsakanyan
  • S. I. Petrosyan
Article
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Abstract

Based on the technology developed by authors of the local diffusion doping of certain parts of the ZnO film of the donor (Ga) and acceptor (Li) impurities, a transparent field-effect transistor with the n-type channel was manufactured. The MgF2 films were used as a gate insulator. The field effect and the dark electrical characteristics of the structures were investigated. The field phototransistors based on these structures have been developed. The photoelectric characteristics of the field phototransistors were investigated, and the mechanism of the photoelectric amplification was proposed.

Keywords

field-effect transistor diffusion technology donor acceptor zinc oxide 

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Notes

Acknowledgments

This work was financially supported by the Russian-Armenian University at the expense of the subsidies from the Ministry of Education and Science of the Russian Federation.

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Copyright information

© Allerton Press, Inc. 2019

Authors and Affiliations

  • R. K. Hovsepyan
    • 1
    • 2
    Email author
  • N. R. Aghamalyan
    • 1
    • 2
  • Y. A. Kafadaryan
    • 1
    • 2
  • A. A. Arakelyan
    • 1
    • 2
  • H. G. Mnatsakanyan
    • 1
    • 2
  • S. I. Petrosyan
    • 1
    • 2
  1. 1.Russian-Armenian UniversityYerevanArmenia
  2. 2.Institute for Physical ResearchNAS of ArmeniaAshtarakArmenia

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