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Bulletin of the Lebedev Physics Institute

, Volume 46, Issue 1, pp 36–39 | Cite as

Study of Microstructure Features of the Surface Region of the Photovoltaic Converter with an Antireflective Porous Silicon Film and an n+—p Junction

  • N. N. Mel’nikEmail author
  • V. L. Fedorov
  • V. V. Tregulov
Article
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Abstract

Using methods for measuring photocurrent and Raman scattering spectra the surface region microstructure of the silicon photovoltaic converter with n+p junction and an antireflective porous silicon film is studied. The n+p junction is formed by thermal diffusion of phosphorus from a porous film. It is found that high-temperature treatment during diffusion results in coarsening silicon crystallites and a decrease in the defect density in the porous silicon film. It is noted that the n+p junction is formed within the largest crystallites of the porous silicon film.

Keywords

porous silicon pn junction diffusion Raman scattering photocurrent 

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© Allerton Press, Inc. 2019

Authors and Affiliations

  • N. N. Mel’nik
    • 1
    Email author
  • V. L. Fedorov
    • 1
  • V. V. Tregulov
    • 2
  1. 1.Lebedev Physical InstituteRussian Academy of SciencesMoscowRussia
  2. 2.Yesenin Ryazan State UniversityRyazanRussia

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