Structure and Electrophysical Properties of the Diamond–Graphen–Silicon Carbide Composite
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The influence was studied of the addition of n-layer graphene Gn(4) and silicon nanocarbide in the sintering under high pressure and temperature with the silicon impregnation of the mixture on the structure and electrophysical properties of a diamond composite.
Keywordsdiamond graphene composite structure electrical resistance
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- 1.Shul’zhenko, A.A., Gargin, V.G., Bochechka, A.A., and Romanko, L.A., The effect of some additives on the strength and electrophysical properties of a composite diamond–silicon carbide, Synthesis, sintering and properties of superhard materials, Collected scientific papers, Responsible Editor A.A. Shul’zhenko, Kyiv: Bakul Institute for Superhard Materials of National Academy of Sciences of Ukraine, 2000, pp. 79–88.Google Scholar
- 2.Shul’zhenko, A.A., Jaworska, L., Sokolov, A.N., et al., Electrically conductive Polycrystalline superhard material based on diamond and n-layer graphene’s, Chemistry Chem. Technol., 2016, vol. 59, no. 8, pp. 69–74.Google Scholar