Journal of Zhejiang University-SCIENCE A

, Volume 7, Issue 3, pp 472–476 | Cite as

Characterization of DC magnetron sputtering deposited thin films of TiN for SBN/MgO/TiN/Si structural waveguide

  • Xu Xuan-qian  (徐玄前)
  • Ye Hui  (叶辉)
  • Zou Tong  (邹桐)


Optimal parameters for depositing Titanium nitride (TiN) thin films by DC reactive magnetron sputtering were determined. TiN thin films were deposited on Si (100) substrates by DC reactive magnetron sputtering, at different temperatures, different electrical current values, and different N2/Ar ratios. Structural characteristics of TiN thin films were measured by X-ray diffraction (XRD); surface morphology of the thin films was characterized using an atomic force microscope (AFM). The electric resistivity of the TiN films was measured by a four-point probe. In the result, temperature is 500 °C, electrical current value is 1.6 A, pure N2 is the reacting gas, TiN thin film has the preferred (200) orientation, resistance is small enough for its use as bottom electrodes.

Key words

Titanium nitride (TiN) Thin film Sputtering Orientation Waveguide 


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Copyright information

© Springer-Verlag 2006

Authors and Affiliations

  • Xu Xuan-qian  (徐玄前)
    • 1
  • Ye Hui  (叶辉)
    • 1
  • Zou Tong  (邹桐)
    • 1
  1. 1.State Key Laboratory of Modern Optical InstrumentationZhejiang UniversityHangzhouChina

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