On-chip optical interconnect using visible light
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We propose and fabricate a monolithic optical interconnect on a GaN-on-silicon platform using a wafer-level technique. Because the InGaN/GaN multiple-quantum-well diodes (MQWDs) can achieve light emission and detection simultaneously, the emitter and collector sharing identical MQW structure are produced using the same process. Suspended waveguides interconnect the emitter with the collector to form in-plane light coupling. Monolithic optical interconnect chip integrates the emitter, waveguide, base, and collector into a multi-component system with a common base. Output states superposition and 1×2 in-plane light communication are experimentally demonstrated. The proposed monolithic optical interconnect opens a promising way toward the diverse applications from in-plane visible light communication to light-induced artificial synaptic devices, intelligent display, on-chip imaging, and optical sensing.
Key wordsHomogeneous integration Multiple-quantum-well diode Visible light interconnection Coexistence of light emission and photodetection
CLC numberTN491 E963
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