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Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance

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A four-dimensional memristive system is constructed using a novel ideal memristor with cosine memductance. Due to the special memductance nonlinearity, this memristive system has a line equilibrium set (0, 0, 0, δ) located along the coordinate of the inner state variable of the memristor, whose stability is periodically varied with a change of δ. Nonlinear and one-dimensional initial offset boosting behaviors, which are triggered by not only the initial condition of the memristor but also other two initial conditions, are numerically uncovered. Specifically, a wide variety of coexisting attractors with different positions and topological structures are revealed along the boosting route. Finally, circuit simulations are performed by Power SIMulation (PSIM) to confirm the unique dynamical features.

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Author information

Correspondence to Bo-cheng Bao.

Additional information

Compliance with ethics guidelines

Mo CHEN, Xue REN, Hua-gan WU, Quan XU, and Bo-cheng BAO declare that they have no conflict of interest.

Project supported by the National Natural Science Foundation of China (Nos. 61601062, 51777016, 51607013, and 61801054) and the Natural Science Foundation of Jiangsu Province, China (No. BK20191451)

Mo CHEN, first author of this invited paper, is an associate professor at the School of Information Science and Engineering, Changzhou University, China. Her research interests focus mainly on bifurcation and chaos, analysis and simulation of neuromorphic circuits, and nonlinear circuits and systems. She is a key member of the “Memristor Circuit and Intelligent Network (MCIN)” group and this group won the 2019 Excellent Scientific and Technological Innovation Team of Jiangsu Province, China.

CHEN received BS degree in information engineering in 2003, and MS and PhD degrees in electromagnetic field and microwave technology in 2006 and 2009, respectively, all from Southeast University, China. She is the author (co-author) of 50 journal papers indexed by the Web of Science. She won the “IET Premium Awards 2018.”

Bo-cheng BAO, corresponding author of this invited paper, is a full professor at the School of Information Science and Engineering, Changzhou University, Chang-zhou, China. His current research interests include on bifurcation and chaos, analysis and simulation of neuromorphic circuits, power electronic circuits, and nonlinear circuits and systems. He is the team leader of the “Memristor Circuit and Intelligent Network (MCIN)”group, and his group won the 2019 Excellent Scientific and Technological Innovation Team of Jiangsu Province, China.

BAO received BS and MS degrees in electronic engineering from the University of Electronics Science and Technology of China, in 1986 and 1989, respectively. He obtained a PhD degree from the Department of Electronic Engineering, Nanjing University of Science and Technology, China, in 2010. He has more than 20 years’ experiences in industry and worked in several enterprises as Senior Engineer or General Manager. From June 2008 to January 2011, he was a professor at the School of Electrical and Information Engineering, Jiangsu University of Technology, China. From June 2013 to December 2013, he visited the Department of Electrical and Computer Engineering, University of Calgary, Calgary, AB, Canada. He has authored (co-authored) three academic monographs and more than 160 journal papers indexed by the Web of Science. He won the “IET Premium Awards 2018.”

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Chen, M., Ren, X., Wu, H. et al. Periodically varied initial offset boosting behaviors in a memristive system with cosine memductance. Front Inform Technol Electron Eng 20, 1706–1716 (2019). https://doi.org/10.1631/FITEE.1900360

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Key words

  • Initial offset boosting
  • Memristive system
  • Memductance
  • Line equilibrium set

CLC number

  • O415