Group III-Sb compound semiconductors are promising materials for future CMOS circuits. Especially, In1-xGaxSb is considered as a complimentary p-type channel material to n-type In1-xGaxAs MOSFET due to the superior hole transport properties and similar chemical properties in III-Sb’s to those of InGaAs. The heteroepitaxial growth of In1-xGaxSb on Si substrate has significant advantage for volume fabrication of III-V ICs. However large lattice mismatch between InGaSb and Si results in many growth-related defects (micro twins, threading dislocations and antiphase domain boundaries); these defects also act as deep acceptor levels. Accordingly, unintentional doping in InGaSb films causes additional scattering, increase junction leakages and affects the interface properties. In this paper, we studied the correlations between of defects and hole carrier densities in GaSb and strained In1-xGaxSb quantum well layers by using various designs of metamorphic superlattice buffers.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
S. Madisetti, V. Tokranov, A. Greene, M. Yakimov, M. Hirayama, S. Oktyabrsky, S. Bentley and A. P. Jacob, J. Vac. Sci. Technol. B., 32, 051206 (2014).
R. L. Chu, T. H. Chiang, W. J. Hsueh, K. H. Chen, K. Y. Lin, G. J. Brown, J. I. Chyi, J. Kwo and M. Hong, Appl. Phys. Lett. 2014, 105, 182106.
S. Hosseini Vajargah, S. Ghanad-Tavakoli, J. S. Preston, R. N. Kleiman and G. A. Botton, J. Appl. Phys. 114, 113101.
V. Tokranov, S. Madisetti, M. Yakimov, P. Nagaiah, and S. Oktyabrsky, J. Crystal Growth 378, 631 (2013).
M. Fanfoni, M. Tomellini, J. Electron. Spectrosc. Relat. Phenom. 76 123 (1995).
About this article
Cite this article
Sasaki, S., Madisetti, S., Tokranov, V. et al. Group III-Sb Metamorphic Buffer on Si for p-Channel all-III-V CMOS: Electrical Properties, Growth and Surface Defects. MRS Online Proceedings Library 1790, 13–18 (2015). https://doi.org/10.1557/opl.2015.515