Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

MRS Online Proceedings Library volume 1561, Article number: 1 (2013) Cite this article

Abstract

We investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

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Affiliations

  1. Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA

    Cheng-Ying Huang, Jeremy J. M. Law, Mark J. W. Rodwell & Arthur C. Gossard

  2. Materials Department, University of California, Santa Barbara, CA, 93106, USA

    Hong Lu & Arthur C. Gossard

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  1. Cheng-Ying Huang
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  2. Jeremy J. M. Law
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  3. Hong Lu
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  4. Mark J. W. Rodwell
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  5. Arthur C. Gossard
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Correspondence to Cheng-Ying Huang.

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Huang, CY., Law, J.J.M., Lu, H. et al. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs. MRS Online Proceedings Library 1561, 1 (2013). https://doi.org/10.1557/opl.2013.821

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