Abstract
The n-type hydrogenated microcrystalline silicon oxide (μc-SiOX:H(n)) films with different stoichiometry have been successfully prepared by varying the CO2-to-SiH4 flow ratio in the PECVD system. By using the μc-SiOX:H(n) as a replacement for μc-Si:H(n) and ITO, the conversion efficiency of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem cells were improved to 6.35% and 10.15%, respectively. The major improvement of the short circuit current density (JSC) and these cell efficiencies were originated from the increased optical absorption, which was confirmed by the quantum efficiency measurement showing increased response in the long-wavelength region. Moreover, the all PECVD process except the metal contact simplified the fabrication and might benefit the industrial production.
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References
J. Meier, R. Flückiger, H. Keppner and A. Shah, Appl. Phys. Lett. 65, 860 (1994).
P. Buehlmann, J. Bailat, D. Domine, A. Billet, F. Meillaud, A. Feltrin and C. Ballif, Appl. Phys. Lett. 91, 143505 (2007).
D. Fischer, S. Dubail, J.A. Anna Selvan, N. Pellaton Vaucher, R. Platz, Ch. Hof, U. Kroll, J. Meier, P. Torres, H. Keppner, N. Wyrsch, M. Goetz, A. Shah and K.-D. Ufert, Proc. 25th IEEE PVSC, Washington D.C., USA, 1053 (1996).
P. Obermeyer, C. Haase and H. Stiebig, Appl. Phys. Lett. 92, 181102 (2008).
K. Hayashi, K. Masataka, A. Ishikawa and H. Yamaguchi, Proc. 1st IEEE WCPEC, Hawaii, USA, 674 (1994).
E. Terzini, A. Rubino, R. de Rosa and M. Addonzonio, Mater. Res. Soc. Symp. Proc. 377, 681 (1995).
S.S. Hegedus, W.A. Buchanan and E. Eser, Proc. 26th IEEE PVSC, Anaheim, CA, USA, 603 (1997).
F.J. Haug, T. Söderström, O. Cubero, V. Terrazzoni-Daudrix and C. Ballif, J. Appl. Phys. 104, 064509 (2008).
P.D. Veneri, L.V. Mercaldo and I. Usatii, Appl. Phys. Lett. 97, 023512 (2010).
Y.P. Lin, Y.W. Tseng, S.W. Liang, C.H. Hsu and C.C. Tsai, presented at the 2012 MRS Spring Meeting, San Francisco, CA, USA, 2012 (unpublished).
T. Grundler, A. Lambertz and F. Finger, Phys. Status Solidi C 7, 1085 (2010).
V. Smirnov, O. Astakhov, R. Carius, Yu. Petrusenko, V. Borysenko and F. Finger, Jpn. J. Appl. Phys. 51, 022301 (2012).
D. Das, S.M. Iftiquar and A.K. Barua, J. Non-Cryst. Solids 210, 148 (1997).
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Liang, S.W., Hsu, C.H., Tseng, Y.W. et al. Employing μc-SiOX:H as n-Type Layer and Back TCO Replacement for High-Efficiency a-Si:H/μc-Si:H Tandem Solar Cells. MRS Online Proceedings Library 1536, 33–38 (2013). https://doi.org/10.1557/opl.2013.749
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DOI: https://doi.org/10.1557/opl.2013.749