Nanometer Resolution XANES Imaging ofin situ switched individual PC-RAM devices


We report on the study of single devices of phase-change (Ge2Sb2Te5) memory cells in line cell type devices. Devices were investigated employing an x-ray nanobeam of only about 150 nm diameter, which could be fully contained within the spatial extent of the active area within a single device cell. XANES spectra showing the device in the amorphous and crystalline state have been successfully collected after switching the devicein situ at the synchrotron. By monitoring the fluorescence response of the sample constituent materials at a constant photon energy (corresponding to the Ge K-edge absorption edge) as a function of x-ray beam position on the sample 2D maps have been produced.

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  1. [1]

    S. Raoux, J. L. Jordan-Sweet, and A. J. Kellock, J. Appl. Phys. 103, 114310 (2008).

    Article  Google Scholar 

  2. [2]

    R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, and H. Tanida, Nano. Lett. 10, 414 (2010).

    CAS  Article  Google Scholar 

  3. [3]

    R. Bez and A. Pirovano, Materials Science in Semiconductor Processing 7, 349 (2004), ISSN 1369–8001, papers presented at the E-MRS 2004 Spring Meeting Symposium C: New Materials in Future Silicon Technology.

    CAS  Article  Google Scholar 

  4. [4]

    R. Bez, R. J. Gleixner, F. Pellizzer, A. Pirovano, and G. Atwood, Phase Change Materials: Science and Applications (Springer Verlag, 2008), chap. 16, pp. 355–380.

  5. [5]

    N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys. 69, 2849 (1991).

    CAS  Article  Google Scholar 

  6. [6]

    W. Welnic, S. Botti, L. Reining, and M. Wuttig, Phys. Rev. Lett. 98, 236403 (2007).

    Article  Google Scholar 

  7. [7]

    A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, in Electron Devices Meeting. IEDM ’03 Technical Digest. (IEEE International, 2003), pp. 699–702.

  8. [8]

    M. Takagaki, M. Suzuki, N. Kawamura, H. Mimura, and T. Ishikawa, Proc. 8th Int. Conf. X-ray Microscopy 7, 267 (2005).

    Google Scholar 

  9. [9]

    K. Yamauchi, K. Yamamura, H. Mimura, Y. Sano, A. Saito, K. Endo, A. Souvorov, M. Yabashi, K. Tamasaku, T. Ishikawa, et al., Jpn. J. Appl. Phys. 42, 7129 (2003).

    CAS  Article  Google Scholar 

  10. [10]

    P. Fons, H. Osawa, A. V. Kolobov, T. Fukaya, M. Suzuki, T. Uruga, N. Kawamura, H. Tanida, and J. Tominaga, Phys. Rev. B 82, 041203 (2010).

    Article  Google Scholar 

  11. [11]

    A. Kolobov, P. Fons, A. Frenkel, A. Ankudinov, J. Tominaga, and T. Uruga, Nature Mater. 3, 703 (2004).

    CAS  Article  Google Scholar 

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Correspondence to Jan H. Richter.

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Richter, J.H., Kolobov, A.V., Fons, P. et al. Nanometer Resolution XANES Imaging ofin situ switched individual PC-RAM devices. MRS Online Proceedings Library 1563, 1–5 (2013).

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