Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films

Abstract

Nonvolatile unipolar resistive switching properties of the amorphous LaGdO3 thin films deposited by pulsed laser deposition have been studied. Reliable and repeatable switching of the resistance of LaGdO3 film was obtained between low and high resistance states with nearly constant resistance ratio ∼ 106 and non-overlapping switching voltages in the range of ∼0.6-0.75 V and 2.5-4 V respectively. The switching between low and high resistance states was attributed to the formation and rupture of conductive filaments using temperature dependent resistance measurements. The current conduction mechanisms of the LaGdO3 film in low and high resistance states were found to follow the Ohmic behavior and Poole-Frenkel emission respectively. The resistance of low and high resistance states of the film remained nearly constant for up to ∼ 104 seconds indicating good retention. The observed resistive switching characteristics of LaGdO3 thin films are promising for futuristic nonvolatile memories.

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Correspondence to P. Misra.

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Misra, P., Pavunny, S.P. & Katiyar, R.S. Nonvolatile Resistive Memory Switching in Amorphous LaGdO3 Thin Films. MRS Online Proceedings Library 1562, 2 (2013). https://doi.org/10.1557/opl.2013.556

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