Accumulated body  approach to mitigate the effects of line edge roughness on bulk silicon finFETs and tri-gate FETs is analyzed through 3D TCAD simulations. A side-gate surrounding the body portion of the FET is used to accumulate the body with majority carriers. This approach is predicted to reduce device-to-device variability due to line edge roughness by stronger accumulation of the body in the wider sections of the channel and confinement of the channel away from the edges.
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Akbulut, M.B., Silva, H. & Gokirmak, A. Pentagate Approach to Reduce the Line Edge Roughness Effects in Bulk Si Tri-gate Transistors. MRS Online Proceedings Library 1510, 11 (2013). https://doi.org/10.1557/opl.2013.529