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Heteroepitaxial bonding of Si for hybrid photonic devices

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Abstract

New fabrication routes for hybrid photonic devices are explored. We report on silicon bonding to III-V semi-conducteurs e.g. Si/InP for emission/amplification function. The materials have been bonded to silicon since it can be nanostructured to obtain optical guides. The bonded surfaces are of the order of ∼ 1 cm2. Special attention has been paid to the surface preparation. The obtained structure has been characterized employing XRD while the mechanical response and interface strength have been investigated employing instrumented nanoindentation.

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Authors and Affiliations

  1. Institut P’, CNRS - Université de Poitiers – ENSMA - UPR 3346, SP2MI-Téléport 2-Bd Marie et Pierre Curie, B.P. 30179, Futuroscope-Chasseneuil Cedex, 86962, France

    Eric Le Bourhis

  2. Laboratoire de Photonique et de Nanostructures, UPR 20 CNRS, Route de Nozay, Marcoussis, 91460, France

    Anne Talneau, Isabelle Sagnes, Gilles Patriarche & Ludovic Largeau

  3. Institut d’Electronique, de Microélectronique et de Nanotechnologie (IEMN), Avenue Poincaré, Villeneuve d’Ascq cedex, 59652, France

    David Troadec

Authors
  1. Eric Le Bourhis
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  2. Anne Talneau
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  3. Isabelle Sagnes
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  4. Gilles Patriarche
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  5. Ludovic Largeau
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  6. David Troadec
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Le Bourhis, E., Talneau, A., Sagnes, I. et al. Heteroepitaxial bonding of Si for hybrid photonic devices. MRS Online Proceedings Library 1510, 10 (2013). https://doi.org/10.1557/opl.2013.447

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