Heteroepitaxial bonding of Si for hybrid photonic devices


New fabrication routes for hybrid photonic devices are explored. We report on silicon bonding to III-V semi-conducteurs e.g. Si/InP for emission/amplification function. The materials have been bonded to silicon since it can be nanostructured to obtain optical guides. The bonded surfaces are of the order of ∼ 1 cm2. Special attention has been paid to the surface preparation. The obtained structure has been characterized employing XRD while the mechanical response and interface strength have been investigated employing instrumented nanoindentation.

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Correspondence to Eric Le Bourhis.

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Le Bourhis, E., Talneau, A., Sagnes, I. et al. Heteroepitaxial bonding of Si for hybrid photonic devices. MRS Online Proceedings Library 1510, 10 (2013). https://doi.org/10.1557/opl.2013.447

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