Fabrication of silicon nanowires by ion beam irradiation


Silicon nanowires are becoming more important because of increasing requirements of the small scale and dense integration of devices. We report a top-down fabrication method for silicon nanowires using high-energy ion beam irradiation of bulk p-type silicon followed by electrochemical etching. Silicon nanowires with a diameter of ∼50nm have been fabricated and densely patterned nanowire arrays fabricated in different resistivity silicon wafers. With a suitable support structure, free standing silicon nanowires are also achieved. We investigate results depending on silicon wafer resistivity and location within the irradiated area.

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Correspondence to M. B. H. Breese.

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Song, J., Dang, Z.Y., Azimi, S. et al. Fabrication of silicon nanowires by ion beam irradiation. MRS Online Proceedings Library 1512, 9 (2013). https://doi.org/10.1557/opl.2013.423

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