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Fabrication of silicon nanowires by ion beam irradiation

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Silicon nanowires are becoming more important because of increasing requirements of the small scale and dense integration of devices. We report a top-down fabrication method for silicon nanowires using high-energy ion beam irradiation of bulk p-type silicon followed by electrochemical etching. Silicon nanowires with a diameter of ∼50nm have been fabricated and densely patterned nanowire arrays fabricated in different resistivity silicon wafers. With a suitable support structure, free standing silicon nanowires are also achieved. We investigate results depending on silicon wafer resistivity and location within the irradiated area.

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Authors and Affiliations

  1. Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore, 117542, China

    J. Song, Z. Y. Dang, S. Azimi & M. B. H. Breese

  2. Singapore Synchrotron Light Source (SSLS), 5 Research Link, National University of Singapore, 5 Research Link, Singapore, 117603, China

    M. B. H. Breese

Authors
  1. J. Song
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  2. Z. Y. Dang
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  3. S. Azimi
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  4. M. B. H. Breese
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Correspondence to M. B. H. Breese.

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Song, J., Dang, Z.Y., Azimi, S. et al. Fabrication of silicon nanowires by ion beam irradiation. MRS Online Proceedings Library 1512, 9 (2013). https://doi.org/10.1557/opl.2013.423

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