Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology

Abstract

We present the fabrication and characterization of low-temperature ambipolar thin-film transistors (TFTs) based on hydrogenated amorphous silicon-germanium (a-SiGe:H) as active layer. Inverted staggered a-SiGe:H TFTs were fabricated on Corning glass. Spin-on glass silicon dioxide was used as gate dielectric to improve the quality of the dielectric-semiconductor interface. For positive gate bias the transfer characteristic showed n-type TFT behavior, while for negative gate bias p-type behavior was observed. The n-type region exhibits subthreshold slope of 0.45 V/decade while the p-type region shows a subthreshold slope of 0.49 V/decade.

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Acknowledgments

The authors thank the staff of the laboratory of microelectronics at INAOE and M. Dominguez acknowledges CONACYT for the scholarship No. 160547.

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Correspondence to Miguel A. Dominguez.

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Dominguez, M.A., Rosales, P., Torres, A. et al. Development of Low-Temperature Ambipolar a-SiGe:H Thin-Film Transistors Technology. MRS Online Proceedings Library 1426, 169–173 (2012). https://doi.org/10.1557/opl.2012.869

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