Graphene, a two-dimensional carbon allotrope, has raised great interests as a material candidate for future electronics due to its superb carrier transport and unique physics. The demand for future-generation large-scale carbon-based electronics motivates assembly of large-area graphene and selection of ideal substrate material that best preserves the transport property of graphene. In this work, CVD-assembled large-area graphene on thin multilayer hexagonal boron nitride (h-BN) is employed to demonstrate the basic building block of digital circuit — inverter prototype made of two graphene-channel field-effect transistors (GFETs). The doping in the CVD-grown graphene, probed via electrical measurements, is implemented through non-uniform local surface chemistry. The full transfer response of the graphene logic inverter is demonstrated in the localized P/N doping region.
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C. Berger, Z. Song, T. Li, X. Li, A. Y. Ogbazghi, R. Feng, Z. Dai, A. N. Marchenkov, E. H. Conrad, P. N. First, and W. A. de Heer, J. Phys. Chem. B 108, 19912 (2004).
A. N. Obraztsov, Nature Nanotech. 4, 212 (2009).
C. R. Dean, A. F. Young, I. Meric, C. Lee, L. Wang, S. Sorgenfrei, K. Watanabe, T. Taniguchi, P. Kim, K. L. Shepard, and J. Hone, Nature Nanotech. 5, 722 (2010).
W. Gannett, W. Regan, K. Watanabe, T. Taniguchi, M. F. Crommie, and A. Zettl, Appl. Phys. Lett. 98, 242105 (2011).
E. Kim, T. Yu, E. S. Song, and B. Yu, Appl. Phys. Lett. 98, 262103 (2011).
R. Sordan, F. Traversi, and V. Russo, Appl. Phys. Lett. 94, 073305 (2009).
F. Traversi, V. Russo, and R. Sordan, Appl. Phys. Lett. 94, 223312 (2009).
Y. Shi, Y. Shi, C. Hamsen, X. Jia, K. K. Kim, A. Reina, M. Hofmann, A. L. Hsu, K. Zhang, H. Li, Z.-Y. Juang, M. S. Dresselhaus, L.-J. Li, and J. Kong, Nano Lett. 10, 4134 (2010).
X. S. Li, W. Cai, J. An, S. Kim, J. Nah, D. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S. K. Banerjee, L. Colombo, and R. S. Ruoff, Science 324, 312 (2009).
V. Geringer, D. Subramaniam, A. K. Michel, B. Szafranek, D. Schall, A. Georgi, T. Mashoff, D. Neumaier, M. Liebmann, and M. Morgenstern, Appl. Phys. Lett. 96, 082114 (2010).
H.-Y. Chiu, V. Perebeinos, Y.-M. Lin, and Ph. Avouris, Nano Lett. 10, 4634 (2010).
L. Liao, J. Bai, R. Cheng, Y.-C. Lin, S. Jiang, Y. Huang, X. Duan, Nano Lett. 10, 1917 (2010).
F. Xia, D. B. Farmer, Y.-M. Lin, and P. Avouris, Nano. Lett. 10, 715 (2010).
T. Yu, C.-W. Liang, C. Kim, and B. Yu, Appl. Phys. Lett. 98, 243105 (2011).
The research was partially supported by National Science Foundation (NSF) Grants ECCS- 1002228 and ECCS-1028267. The authors greatly appreciate technical support from Dr. T. Taniguchi and Dr. K. Watanabe at Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Japan.
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Kim, E., Jain, N., Xu, Y. et al. CVD-Graphene Complementary Logic on Ultra-thin Multilayer Hexagonal Boron Nitride. MRS Online Proceedings Library 1407, 660 (2012). https://doi.org/10.1557/opl.2012.660