Abstract
Graphene, a two-dimensional carbon allotrope, has raised great interests as a material candidate for future electronics due to its superb carrier transport and unique physics. The demand for future-generation large-scale carbon-based electronics motivates assembly of large-area graphene and selection of ideal substrate material that best preserves the transport property of graphene. In this work, CVD-assembled large-area graphene on thin multilayer hexagonal boron nitride (h-BN) is employed to demonstrate the basic building block of digital circuit — inverter prototype made of two graphene-channel field-effect transistors (GFETs). The doping in the CVD-grown graphene, probed via electrical measurements, is implemented through non-uniform local surface chemistry. The full transfer response of the graphene logic inverter is demonstrated in the localized P/N doping region.
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Acknowledgments
The research was partially supported by National Science Foundation (NSF) Grants ECCS- 1002228 and ECCS-1028267. The authors greatly appreciate technical support from Dr. T. Taniguchi and Dr. K. Watanabe at Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Japan.
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Kim, E., Jain, N., Xu, Y. et al. CVD-Graphene Complementary Logic on Ultra-thin Multilayer Hexagonal Boron Nitride. MRS Online Proceedings Library 1407, 660 (2012). https://doi.org/10.1557/opl.2012.660
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DOI: https://doi.org/10.1557/opl.2012.660