CMOS Compatible Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors

Abstract

The metal-catalyst-free growth of carbon nanotubes (CNTs) using chemical vapor deposition and the application in field-effect transistors (FETs) is presented. The CNT growth process used a 3-nm-thick Ge layer on SiO2 that was subsequently annealed to produce Ge nanoparticles. Raman measurements show the presence of radial breathing mode (RBM) peaks and the absence of the disorder induced D-band, indicating single walled CNTs (SWNTs) with a low defect density. The synthesized CNTs are used to fabricate CNTFETs and the best device has a state-of-the-art on/off current ratio of 3×108 and a steep sub-threshold slope of 110 mV/decade.

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Acknowledgments

The authors would like to acknowledge EPSRC for supporting this work. T.U. thanks the Research Institute of Electrical Communication, Tohoku University for supporting the research.

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Uchino, T., Ayre, G., Smith, D. et al. CMOS Compatible Growth of Carbon Nanotubes and Their Application in Field-Effect Transistors. MRS Online Proceedings Library 1407, 377 (2012). https://doi.org/10.1557/opl.2012.377

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