Abstract
The morphology of graphene on Si and SiC substrates is investigated using molecular- dynamics simulation. The effects of the size and orientation of graphene on its roughness, distance from the substrate, and periodic structure are examined. The roughness and distance show the size dependency which agrees with the size dependency of the ratio of the periphery length of graphene to its area. It is found there are some cases in which the roughness of graphene can be suppressed.
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References
C. Tang, L. Meng, L. Sun, K. Zhang, and J. Zhong, J. Appl. Phys. 104, 113536(2008).
E. Lampin, C. Priester, C. Krzeminski, and L. Magaud, J. Appl. Phys. 107, 103514 (2010).
M. Suemitsu, Y. Miyamoto, H. Handa, and A. Konno, e-J. Surf. Sci. Nanotech. 7, 311 (2009).
S. Abe, H. Handa, R. Takahashi, K. Imaizumi, H. Fukidome, and M. Suemitsu, Jpn. J. Appl. Phys. 50, 070102 (2011).
J. Tersoff, Phys. Rev. B 37, 6991 (1988).
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Seto, S., Arai, N. & Shintani, K. Atomistic Study of the Morphology of Graphene on Si and SiC Substrates. MRS Online Proceedings Library 1407, 334 (2012). https://doi.org/10.1557/opl.2012.334
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DOI: https://doi.org/10.1557/opl.2012.334