Pentacene and poly 3-hexylthiophene (P3HT) are the most promising p-type organic semiconducting materials for fabrication of organic field effect transistors (OFETs). OFETs with aforesaid organic semiconducting materials have been demonstrated as total dose detectors for ionizing radiation, wherein the changes in the electrical characteristic parameters, such as, increase in the OFF current, increase in the ON current, change in the current ratio, shift in the threshold voltage, change in the subthreshold swing, etc., were used as a measure of ionizing radiation dose. Upon exposure to ionizing radiation P3HT based OFET sensor has shown an OFF current sensitivity of 4.4 nA/Gy while pentacene based OFET sensor has shown an OFF current sensitivity of 26.7 nA/Gy for a total of 50 Gy dose of ionizing radiation. Change in the conductivity of the thin-films of pentacene and P3HT were observed and compared using electrostatic force microscopy (EFM) imaging before and after exposure to ionizing radiation. Effects of ionizing radiation on the energy band structures of the organic semiconducting materials, pentacene and P3HT, have been studied using UV-visible spectroscopy. Moreover, analysis of UV-visible spectra of the thin-films suggested the generation of energy states in larger quantity in case of pentacene thin-film as compared to P3HT thin-film upon exposure to the same dose of ionizing radiation. These results confirm the higher sensitivity observed in pentacene OFET sensor as compared to P3HT OFET sensor in terms of the change in electrical parameters.
This is a preview of subscription content, access via your institution.
Buy single article
Instant access to the full article PDF.
Tax calculation will be finalised during checkout.
G. Guillaud, J. Simon, J. P. Germain, Coord. Chem. Rev. 178 (2), 1433 (1998).
R. S. Dudhe, J. Sinha, A. Kumar, V. R. Rao, Sens. and Actu. B: Chem. 148 (1), 158 (2010).
H. N. Raval, S. P. Tiwari, R. R. Navan, V. R. Rao, Appl. Phys. Lett. 94 (12), 123304 (2009).
H. N. Raval and V. R. Rao, IEEE Elect. Dev. Lett. 31 (12), 1482–1484 (2010).
H. N. Raval and V. Ramgopal Rao, MRS Proceedings, 1312, mrsf10-1312-hh03-10 (2011).
J. M. Lobez, and T. M. Swager, Chem. Int. Ed. 49 (1), 95–98 (2010).
B. Crone, A. Dodabalapur, A. Gelperin, L. Torsi, H. E. Katz, A. J. Lovinger, Z. Bao, Appl. Phys. Lett. 78 (15), 2229–2231 (2001).
C. D. Dimitrakopoulos, P. R. L. Malenfant, Adv. Mater. 14 (2), 99 (2002).
Kazuhito Tsukagoshi, Jun Tanabe, Iwao yagi, Kunji Shigeto, Keiichi Yanagisawa, Yoshinobu aoyagi, J. Appl. Phys. 99, 064506 (2006).
H. N. Raval, S. P. Tiwari, R. R. Navan, Subodh G. Mhaisalkar, V. R. Rao, IEEE Elect. Dev. Lett. 30 (5), 484–486 (2009).
S. P. Tiwari, P. Srinivas, S. Shriram, N. S. Kale, S. G. Mhaisalkar and V. Ramgopal Rao, Thin Solid Films, 516 (5), 770–772 (2008).
About this article
Cite this article
Raval, H.N., Rao, V.R. OFET Sensors with Poly 3-hexylthiophene and Pentacene as Channel Materials for Ionizing Radiation. MRS Online Proceedings Library 1383, 81–86 (2011). https://doi.org/10.1557/opl.2012.184